STD11NM60N-1

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The STD11NM60N-1 is a power MOSFET made by STMicroelectronics.

It is a depletion mode device, meaning that it is on when the voltage is below the power threshold and off when the voltage is above the power threshold. The STD11NM60N-1 can handle the most powerful applications thanks to its maximum drain-source voltage of 600 V, drain-source on-state resistance of 0.017 ohms and maximum continuous drain current of 75 A at a case temperature of 25°C. It has a total gate-source capacitance of 92 pF.

It falls into the Single power MOSFET class, as it is intended for use in single-ended applications, such as switched mode power supplies, uninterruptible power supplies (UPSs), motor control applications, resonant converters, solenoid drivers and other similar applications. Its applications field is wide, as it features a robust shielded package that isolates the device from any external influences.

The working principle of the STD11NM60N-1 is based on the enhancement mode of operation. The MOSFET works by passing electrons through an insulating layer, or gate, when a voltage differential is applied to the gate terminal. With the differential voltage applied, a small current passes through the gate and is amplified exponentially, allowing large current to be passed through the insulation layer. This allows the STD11NM60N-1 to switch from an on to an off state in milliseconds and enables the device to be used in some of the most demanding applications.

The STD11NM60N-1 can be used in a variety of different power supplies and motor control applications and is one of the most robust and reliable MOSFETs available on the market due to its shielded package and high drain-to-source ON-state resistance. Its depletion mode operation also allows it to be used in a wide range of single-ended applications.

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