STF30N65M5

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The STF30N65M5 is a general purpose N-channel power MOSFET that is mainly used in low-voltage applications and is manufactured by STMicroelectronics. The device has a maximum drain-source voltage of 650V and a maximum drain current of 30A. It has very low RDS(on) and operates over a wide temperature range of -55°C to 175°C. It has excellent switching performance at high frequencies, making it an ideal choice for many applications in consumer electronics, automotive, and industrial and medical markets.

The STF30N65M5 uses an all N-channel MOSFET, which is considered to be very robust and reliable. As a result, it can be used in a wide variety of applications, including lighting, audio, gaming, and remote control. It provides high power efficiency and low on-resistance with benefits such as low gate charge (Qg) and low gate-source capacitance (Coss). The device also has a high dV/dt rating, meaning it can switch high voltage loads quickly and safely.

The working principle of the STF30N65M5 is based on the principle of metal oxide field effect transistors (MOSFETs). The device contains an insulated gate with a voltage supplied by the gate-source capacitance. This voltage causes an electric field, which attracts electrons from an area known as the drift zone. The electrons then form a channel between the source and the drain, allowing current to flow.

The drain-source resistance of a MOSFET, which is referred to as the RDS(on), is determined by the gate voltage. When the gate voltage is increased, the RDS(on) decreases and when it is decreased, the RDS(on) increases. With a low RDS(on), the STF30N65M5 can carry high load currents much more efficiently compared to other MOSFETs.

The STF30N65M5 is a high performance device with an integrated fast latch-up protection circuit. It has a surge energy rating of 4.4mJ and a maximum forward diode voltage of 10V. It can be used in various applications, such as motor control, power management and LED lighting.

In conclusion, the STF30N65M5 is a general purpose N-channel power MOSFET that is ideal for many applications in consumer electronics, automotive, and industrial and medical markets. It provides excellent switching performance at high frequencies and has a maximum drain-source voltage of 650V, a maximum drain current of 30A, a low RDS(on), and a high surge energy rating. It is easy to use and provides reliable operation.

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