STF30NM60ND

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2800pF @ 50V
Vgs (Max):	±30V
Gate Charge (Qg) (Max) @ Vgs:	100nC @ 10V
Series:	FDmesh™ II
Rds On (Max) @ Id, Vgs:	130 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	25A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Tube

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Introduction

The STF30NM60ND is a metal-oxide-semiconductor field-effect transistor (MOSFET) that is used in power management applications. It is a high-power, high-frequency MOSFET which features low on-state resistance for maximum efficiency. It is a high voltage device with a maximum breakdown voltage of 600V and a drain-source voltage of 600V. Most commonly associated with motor control, switching applications and load switching, this device has also been used for time-lag switching, spike suppression, and even RF amplification. In this article, we will discuss the application field and working principle of STF30NM60ND.

Application Field

The STF30NM60ND is primarily used in power management applications. It is ideal for a number of applications including motor control, load switching, time-lag switching, and spike suppression. This device can be used as a controller in switching power supplies, as an electromechanical switch, or as a switch in AC/DC converters. It is also used in automotive and automotive-related applications due its low on-state resistance, high-current capabilities, and its ability to work in a wide range of temperatures. This MOSFET is used in fuel systems and even electric vehicle powertrains where power losses must be minimized. Additionally, the device is used in a variety of consumer applications such as kitchen appliances, HVAC systems, and home security systems.

Working Principle

The STF30NM60ND is a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor operates by using a gate voltage to control the flow of current between the source and the drain. This voltage is applied to the gate of the MOSFET, which causes electrons to be attracted to the gate and causes an electric field to be produced. This electric field affects the channel region of the MOSFET and changes the resistance between the drain and the source. When a positive voltage is applied to the gate, the device is said to be in the “on” state. In this state, current is allowed to flow freely between the source and the drain. As the gate voltage increases, so does the current carrying capability of the device until it reaches its maximum capacity. When the voltage applied to the gate is negative, the device is in the “off” state. In this state, current is prevented from flowing between the source and the drain. This is useful in applications such as load switching and motor control where it is important to be able to switch the current on and off. The STF30NM60ND is also designed to operate at very high frequencies, which is useful in applications such as RF amplification and time-lag switching. It is also designed to remain stable over a wide range of operating temperatures, making it well suited for a variety of applications, from consumer applications to automotive applications.

Conclusion

The STF30NM60ND is a high-power, high-frequency MOSFET that is used in motor control, switching applications, and even RF amplification. It is designed to work at high frequencies and in a wide range of temperatures, making it well suited for a variety of applications. It is also designed to have low on-state resistance, which helps to reduce power losses. In this article, we discussed the application field and working principle of this device.

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