STF34N65M5

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The STF34N65M5 is a commonly used single Mosfet (Metal-Oxide-Semiconductor FET) belonging to the STF34N65M family. It is designed to provide superior switching performance in a compact form factor. The STF34N65M5 is an N-channel enhancement-mode field-effect transistor (FET), with a drain-source breakdown voltage of 650V, and a continuous drain current of 75A.

The STF34N65M5 is well-suited for a wide range of applications, particularly those requiring high-speed switching, such as high-frequency switching power supplies, converters, inverters, and motor control systems. It is also commonly used in audio/video applications, such as amplifiers, loudspeakers, and receivers. Additionally, it is frequently used in high-voltage and current drive applications, including lighting control systems.

The STF34N65M5 is an N-channel enhancement-mode field-effect transistor (FET) that operates by using an electric field between the gate and channel to create a conducting channel between the source and drain of the MOSFET. When the gate voltage is positively charged, the channel between the gate and source terminals is “opened” and current will flow through the channel. When the gate voltage is removed, the channel is “closed” and current will not flow.

Thanks to its internal construction, the STF34N65M5 can easily handle high voltage and current levels, making it an ideal choice for a variety of applications. It is also designed to minimize on-state resistance, resulting in improved efficiency and cost savings.

The STF34N65M5 is a low-cost, high performance solution for a wide range of applications, and its compact form factor makes it well-suited for smaller or multiple-component designs.

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