STF33N60DM2

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 150°C (TJ)
Power Dissipation (Max):	35W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1870pF @ 100V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	43nC @ 10V
Series:	MDmesh™ DM2
Rds On (Max) @ Id, Vgs:	130 mOhm @ 12A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drain to Source Voltage (Vdss):	650V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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The STF33N60DM2 is a popular Single-Field Effect Transistor (FET) that is used in many applications. It is a N-Channel MOSFET that has a voltage rating of 770V, which is why it is often used in high voltage applications such as lighting, industrial automation, and other types of power management. This transistor is able to switch both AC and DC current with low on-state resistance and high frequency capabilities. In this article, we will discuss its application fields and working principle.The STF33N60DM2 is suitable for a wide range of applications including DC/DC converter, switched mode power supplies, motor control, and other power-management applications. It can also be used for other circuit operations such as voltage regulation and current limiting. Furthermore, this transistor is versatile enough to be used in low and high side switching applications.In terms of its working principle, the STF33N60DM2 is essentially a field-effect device that utilizes a gate to control the flow of electrons between the source and drain terminals. When the gate voltage is low, the transistor is “off” and no current can flow through the device. When the gate voltage is high, the transistor is “on” and electrons can flow through the device. This device has an on-state resistance of only 0.0041Ω, which enables it to switch current rapidly.In terms of its electrical performance, the STF33N60DM2 is capable of a continuous-drain current of 60A and a peak-drain current of 150A. It also has a maximum junction temperature of 175°C and a total gate charge of 28nC. Furthermore, it has a very low output capacitance of only 15pF, which allows it to switch currents at high frequencies.The STF33N60DM2 is also resistant to electrostatic discharge, making it suitable for applications that must comply with strict ESD requirements. This device is stable in both linear and saturated modes, which make it suitable for use in both power and digital applications. It is also RoHS-compliant and can withstand both static and dynamic operating conditions. Finally, it has an agile design that allows the device to be quickly and easily replaced in the event of failure.In conclusion, the STF33N60DM2 is a popular, high-performance Single-FET MOSFET that is suitable for a wide range of applications. Its high voltage rating, low on-state resistance, and high frequency capabilities make it an ideal choice for switching both AC and DC current. Its robust features, ESD-resistance, and stability in both linear and saturated modes make it suitable for use in very demanding applications.

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