
Allicdata Part #: | 497-4341-5-ND |
Manufacturer Part#: |
STF3HNK90Z |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 3A TO220FP |
More Detail: | N-Channel 800V 3A (Tc) 25W (Tc) Through Hole TO-22... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 25W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 690pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 35nC @ 10V |
Series: | SuperMESH™ |
Rds On (Max) @ Id, Vgs: | 4.2 Ohm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF3HNK90Z is a type of single N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) designed for high-current switching and medium-high-speed, low-power operation. It is also known as a 50V N-channel MOSFET and is made from a silicon-dioxide layer which is placed over a "gate." This gate is responsible for controlling the flow of electrons in the device, and the resulting current can be used to drive loads. Due to its high current handling capacity, the STF3HNK90Z can be used in a variety of applications such as motor drives, computer power supplies, DC/DC converters, audio amplifiers, and other high-speed switching applications.
In terms of its working principle, the STF3HNK90Z is a voltage-controlled semiconductor device. It is composed of layers of insulating material, called a gate dielectric, and a thin layer of "conductive" material (gate), which are separated by a thin insulating layer. The gate is responsible for controlling the amount of current that flows through the device. When a sufficient voltage is applied to the gate, electrons are attracted to the gate and a current is allowed to flow through the device. This current can then be used to drive loads.
The STF3HNK90Z is an ideal choice for applications that require high-current switching and medium-high-speed operation. It is relatively easy to use and can be incorporated into a variety of circuits. The device is also economical, making it an attractive choice for applications that require economical solutions. Furthermore, its low power consumption makes it attractive for low-power applications such as energy-saving lighting and devices.
Overall, the STF3HNK90Z is an excellent choice for applications that require high-current switching and medium-high-speed operation. It is a reliable and economical devices with a low power consumption and can be used in a variety of applications. Its ability to handle high currents makes it an ideal choice for powering a variety of electronic devices such as motor drives, computer power supplies, DC/DC converters, audio amplifiers, and other high-speed switching applications.
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