
Allicdata Part #: | 497-11887-5-ND |
Manufacturer Part#: |
STF34NM60N |
Price: | $ 5.67 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 29.0A TO220FP |
More Detail: | N-Channel 600V 31.5A (Tc) 40W (Tc) Through Hole TO... |
DataSheet: | ![]() |
Quantity: | 300 |
1 +: | $ 5.67000 |
10 +: | $ 5.49990 |
100 +: | $ 5.38650 |
1000 +: | $ 5.27310 |
10000 +: | $ 5.10300 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 40W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2722pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 84nC @ 10V |
Series: | MDmesh™ II |
Rds On (Max) @ Id, Vgs: | 105 mOhm @ 14.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 31.5A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF34NM60N is a N-Channel 600V MOSFET, suitable for beginners in the field of electronics components. The STF34NM60N is also one of the most popular MOSFETs in electronic applications, since it is a simple, reliable and cost-effective solution for many circuit designs. It finds use in high-power switching circuits, power converters and power amplifiers.
MOSFETs, which stands for Metal Oxide Semiconductor Field Effect Transistors, are a type of transistor that is capable of controlling current, voltage and resistance via the application of externally applied voltage. They are available in two types: N-Channel and P-Channel, each providing different functions and requiring different connections. The STF34NM60N belongs to the N-Channel type of MOSFETs.
The STF34NM60N has an on-state resistance of 34mΩ and a maximum drain current of 115A, allowing it to support large operations with little heat generation. This makes it great for applications that require higher current flow and low heat dissipation, such as power amplifiers, power supplies and DC/DC converters. It also features fast switching speeds, good gate-to-drain isolation and excellent noise immunity.
To use the STF34NM60N in your circuit design, it must first be connected properly. It works by applying a positive voltage to the gate, which switches the MOSFET “on” and allows current to flow through the drain and source terminals. To turn the MOSFET “off”, simply reduce the voltage applied to the gate. To ensure such an action, the voltage applied to the gate mustexceed the threshold voltage of the device.
An important feature of the STF34NM60N is the surge capability. This device has the capacity to handle high surges in the output current and can often withstand overcurrent conditions due to its low-thermal resistance and high-pulse drain current characteristics. This allows the STF34NM60N to be applied to power switching applications with confidence.
The STF34NM60N is also a great choice for applications requiring isolation between the gate and drain, power dissipation and current sensing. It features good gate source and source drain isolation, which helps to reduce EMI and improve system performance. It also provides the necessary isolation needed for the use of a current-sensing resistor, which increases system accuracy and response time.
Overall, the STF34NM60N is an excellent choice for a wide variety of applications. It is a cost-effective, highly reliable and robust device that can handle a wide range of operating conditions. It is a great choice for integrating into a variety of circuitry, and its surge capability and low thermal resistance makes it an ideal choice for high-power switching applications.
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