Allicdata Part #: | 497-17291-ND |
Manufacturer Part#: |
STF3LN80K5 |
Price: | $ 0.90 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 2A TO220FP |
More Detail: | N-Channel 800V 2A (Tc) 20W (Tc) Through Hole TO-22... |
DataSheet: | STF3LN80K5 Datasheet/PDF |
Quantity: | 6000 |
1 +: | $ 0.81270 |
10 +: | $ 0.71883 |
100 +: | $ 0.56801 |
500 +: | $ 0.44050 |
1000 +: | $ 0.34776 |
Vgs(th) (Max) @ Id: | 5V @ 100µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 20W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 102pF @ 100V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 2.63nC @ 10V |
Series: | MDmesh™ K5 |
Rds On (Max) @ Id, Vgs: | 3.25 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 2A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STF3LN80K5 is a field-effect transistor (FET) that belongs to the single MOSFET category. It is designed to be used in power management applications and is capable of switching high currents of up to 8A while still providing a low on-state resistance (RDS(ON)) of 0.006 Ω. It has a breakdown voltage (VBRDSS) of 800V and gate-source voltage (VGS) of -8V to +10V.
The working principle of a MOSFET is based on its ability to be electrically modulated by controlling the voltage on its gate terminal. This control is referred to as gating, which creates an electric field that modulates the transistor between its ON and OFF states. The transistor is ON when the voltage on the gate has exceeded the threshold voltage (VTH) and the transistor is OFF when it has not been exceeded.
The STF3LN80K5 transistor is primarily used in power management applications that require a high current-handling capability and low resistance. These applications may include power supply design, power electronics and industrial equipment. It is also well-suited for use in AC-DC converters and switching regulators, as it is capable of fast switching speeds, improved thermal performance and low EMI levels.
The structure of an STF3LN80K5 is based on the MOSFET technology, which is the most popular and widely used type of FET. It consists of a metal–oxide–semiconductor structure, which consists of an insulating layer of metal oxide above the conducting substrate, and a layer of highly doped source and drain regions. The gate terminal sits above this structure and is separated by an insulating layer of metal oxide.
The working principle of the STF3LN80K5 is based on the principle of using a gate voltage to modulate the amount of current flowing between the source and drain terminals. When a positive gate voltage is applied, the transistor turns ON and a current flows through the drain terminal. When a negative voltage is applied, the transistor turns OFF and no current is allowed through. This type of transistor also has an insulated gate, meaning that the gate voltage is not directly connected to the source and drain terminals and thus has no effect on the current flow when the gate voltage is at 0 volts.
The STF3LN80K5 is a very versatile device and can be used in a variety of applications, including power management, AC/DC converters and switching regulators. This device is capable of switching high currents and has a low on-resistance, making it ideal for power management applications. The insulated gate also means that the transistor has low EMI levels and improved thermal performance, making it a good choice for switching applications.
The specific data is subject to PDF, and the above content is for reference
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