STF32NM50N Allicdata Electronics
Allicdata Part #:

497-13266-5-ND

Manufacturer Part#:

STF32NM50N

Price: $ 4.20
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N CH 500V 22A TO-220FP
More Detail: N-Channel 500V 22A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: STF32NM50N datasheetSTF32NM50N Datasheet/PDF
Quantity: 177
1 +: $ 4.19580
10 +: $ 4.06993
100 +: $ 3.98601
1000 +: $ 3.90209
10000 +: $ 3.77622
Stock 177Can Ship Immediately
$ 4.2
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1973pF @ 50V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 62.5nC @ 10V
Series: MDmesh™ II
Rds On (Max) @ Id, Vgs: 130 mOhm @ 11A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF32NM50N is a single N-channel MOSFET, also known as a metal-oxide semiconductor field effect transistor. It is manufactured by STMicroelectronics, and is part of the STF32 series of transistors. It is designed to operate from 38 to 175 volts (Vdss), and it can safely be used at temperatures up to 175°C. The STF32NM50N is a high-power MOSFET that can be used for a variety of applications requiring high current handling capabilities.

The STF32NM50N MOSFET has a wide range of possible applications in the areas of power management and motor control. The transistor is ideal for use in DC Electronics whe rhigh voltage and high current operation is required. In addition, the high current handling capability makes it suitable for use in applications such as power management in automotive electronics, as well as in solar systems, power supplies and inverters.

The STF32NM50N MOSFET operates on the principle of resistive switching. The device consists of two conductive plates separated by an insulating layer. When a positive voltage is applied to one of the plates (the gate), this creates an electric field that attracts electrons and ions from the other plate (the drain). This causes a current to flow from the drain to the gate, which can be used to control the output voltage and current. The transistor works in an similar manner to a normal transistor, but uses an electric field to create the current instead of a moving element. As such, it is a more efficient form of transistor than the traditional BJT.

The STF32NM50N MOSFET is a high-efficiency and reliable device that can be used in a wide range of applications. It is well-suited to power management and high current applications where its high current handling capability and excellent switching performance are needed. It can be used with high voltages and temperatures, making it a very versatile component in the area of power management.

The specific data is subject to PDF, and the above content is for reference

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