Allicdata Part #: | 497-11396-5-ND |
Manufacturer Part#: |
STF32N65M5 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 24A TO-220FP |
More Detail: | N-Channel 650V 24A (Tc) 35W (Tc) Through Hole TO-2... |
DataSheet: | STF32N65M5 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 Full Pack |
Supplier Device Package: | TO-220FP |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 35W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3320pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 72nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 119 mOhm @ 12A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STF32N65M5 is a type of Field Effect Transistor (FET) specifically called a Metal Oxide Semiconductor FET (MOSFET). This type of transistor is especially suited to applications where high performance and low power consumption are required. FETs are transistors that are made of one or more layers of metal and a semiconductor material, and the STF32N65M5 is a single FET.
The STF32N65M5 is ideal for use in applications like audio power amplifiers, power switching circuits, and high-voltage motor control. The transistor features an internally-clamped gate structure which enables it to withstand high voltages up to 650 V, and it also has a low on-resistance of 3.4mΩ.
The internal design of the STF32N65M5 is based on the common source amplifier configuration. The semiconductor material of the device acts as a gate between the source and the drain of the device, allowing electrons to flow from the source to the drain when a voltage is applied to the gate, thus creating a current.
Unlike other common transistors, the STF32N65M5 has an integrated body diode that helps to prevent current flow in the opposite direction of the gate. This helps protect against short-circuits, and helps to improve the overall performance and reliability of the device.
The STF32N65M5 also features a built in ESD protection circuit. This circuit helps to protect the device from electrostatic charge, a common problem in many electrical and electronic circuits. With the built in ESD protection circuit, the device can operate more reliably in harsh environments.
In addition to its ESD protection, the STF32N65M5 also features a thermal shutdown feature. This feature helps to protect the device from over temperature conditions, and if the temperature of the device exceeds a certain limit, the device will shut down to prevent potential damage.
The STF32N65M5 is a powerful device with a wide range of useful features, making it an ideal choice for many power applications. Its low on-resistance, high voltage rating, and built in protection circuits make it an ideal choice for applications in audio power amplifiers, power switching circuits, and high voltage motor control.
The specific data is subject to PDF, and the above content is for reference
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