STF34NM60ND

Vgs(th) (Max) @ Id:	5V @ 250µA
Package / Case:	TO-220-3 Full Pack
Supplier Device Package:	TO-220FP
Mounting Type:	Through Hole
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	40W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	2785pF @ 50V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	80.4nC @ 10V
Series:	FDmesh™ II
Rds On (Max) @ Id, Vgs:	110 mOhm @ 14.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	29A (Tc)
Drain to Source Voltage (Vdss):	600V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>The STF34NM60ND is a N-channel enhancement mode MOSFET developed and manufactured by STMicroelectronics. It belongs to the STF3NM60ND family and is suited for a wide range of applications from low voltage through to high voltage. The STF34NM60ND is capable of operating at temperatures ranging from -55°C to 175°C and features a maximum operating temperature range of 175°C with a maximum operating voltage of 600V. A variety of drains, gates, protects and sources are available for the STF34NM60ND to enable a wide range of applications as well as providing flexibility in power management.</p><p>The STF34NM60ND is a N-channel enhancement mode MOSFET with an integrated body diode. This diode is able to conduct current in one direction and offers protection against short circuits and reverse polarity. The internal body diode has a breakdown voltage of 600V, a forward current of 1.7A and a reverse current of 25mA. The STF34NM60ND also features an internal bias resistor, which prevents the MOSFET from turning on without appropriate input signals. The internal bias resistor prevents the MOSFET from turning on during transient events when the gate voltage is low.</p><p>The STF34NM60ND can be used in a wide range of applications due to its excellent thermal, electrical and reliability characteristics. Its key features include a low on resistance, low gate charge, low threshold voltage and low capacitance. In addition, the STF34NM60ND has a wide operating temperature range and can be used in a variety of commercial and industrial applications.</p><p>The STF34NM60ND can be used as an amplifier in a MOSFET amplifier circuit. A MOSFET amplifier uses the gate-source voltage of the MOSFET to control the device’s output current. The STF34NM60ND can also be used in power supply applications, as a switch and in voltage regulators. Its low on resistance and low gate charge make it an ideal choice for applications requiring efficient power management.</p><p>The STF34NM60ND is a high speed MOSFET with an extremely low on-state resistance. This allows it to switch quickly, allowing the device to be used in applications that require short switching times. The STF34NM60ND is also capable of operating at high frequencies, allowing it to be used in Power MOSFET applications.</p><p>The working principle of the STF34NM60ND is based on the MOS capacitance. The MOS capacitance is determined by the size of the gate, the gate-source voltage and the temperature. The MOS capacitance determines the capacitance between the gate and the source of the MOSFET. When the gate voltage of the MOSFET is increased, the MOS capacitance decreases, thus reducing the on-state resistance of the MOSFET. This results in an increase in the drain current and a decrease in the potential difference between the drain and the source.</p><p>In summary, the STF34NM60ND is a N-channel enhancement mode MOSFET manufactured by STMicroelectronics. It is ideal for a wide range of applications such as amplifiers, voltage regulators and power MOSFETs. It has excellent thermal, electrical and reliability characteristics and its internal body diode provides protection against short circuits and reverse polarity. The STF34NM60ND has a low on resistance and low gate charge, making it suitable for applications requiring efficient power management. Its working principle is based on the MOS capacitance and the gate voltage can be used to control the device’s output current.</p>

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