STF38N65M5 Allicdata Electronics
Allicdata Part #:

497-13102-5-ND

Manufacturer Part#:

STF38N65M5

Price: $ 5.78
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 650V 30A TO-220FP
More Detail: N-Channel 650V 30A (Tc) 35W (Tc) Through Hole TO-2...
DataSheet: STF38N65M5 datasheetSTF38N65M5 Datasheet/PDF
Quantity: 7
1 +: $ 5.77710
10 +: $ 5.60379
100 +: $ 5.48825
1000 +: $ 5.37270
10000 +: $ 5.19939
Stock 7Can Ship Immediately
$ 5.78
Specifications
Vgs(th) (Max) @ Id: 5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 35W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Series: MDmesh™ V
Rds On (Max) @ Id, Vgs: 95 mOhm @ 15A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STF38N65M5 is a part of a complex family of voltage-controlled field-effect transistors (FETs) referred to as metal-oxide semiconductor field-effect transistors (MOSFETs). These are used to control the flow of electrical current in electronics, allowing for precise controlling of the power delivered and diverted to the electronic components.

MOSFETs are especially useful in applications where a large amount of power may be switched at very high speed, such as high-frequency applications. MOSFETs are typically used in switching applications, as they allow for a higher current capacity than other FETs. They also have a relatively low on-resistance, which allows for lower power losses, making them ideal for power electronics applications.

The STF38N65M5 is a power MOSFET device specifically optimized for a wide range of applications including motor drives, appliance control, lighting, and power conversion. It offers an extremely low on-resistance and an almost linear current transfer characteristic. It also features an adaptive gate threshold voltage and a low input capacitance.

The STF38N65M5 works through a principle known as enhancement-mode operation. Enhancement-mode operation means that the current passes through the drain-to-source channel only when a voltage is applied to the gate of the MOSFET. Without a voltage applied to the gate, the FET is turned off and no current passes through the device. The voltage applied to the gate controls the amount of current that passes through the device, allowing for precise control over current flow.

The STF38N65M5 is an N-channel enhancement-mode MOSFET, which uses an n-type semiconductor to control a portion of the device. It has an ON-state resistance of 38mΩ at 10V, making it ideal for low-voltage applications. Its low Threshold Voltage of 1.5V makes it ideal for high-frequency switching applications, as it will respond to a lower gate voltage quickly and efficiently.

The STF38N65M5 has a variety of applications. It is commonly used in DC-DC converter applications and motor control applications. It can also be used in audio amplifiers, lighting systems, and power supplies. It is also used in microprocessor applications for power switching and to protect sensitive electronic components from excessive current.

The STF38N65M5 is an ideal choice for a wide range of applications requiring fast switching and precise control of current. It is also suitable for high-frequency applications due to its low on-resistance and low threshold voltage. Its high current capacity and low offset voltage also make it ideal for power electronics applications.

The specific data is subject to PDF, and the above content is for reference

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