Allicdata Part #: | STP45N60DM6-ND |
Manufacturer Part#: |
STP45N60DM6 |
Price: | $ 2.80 |
Product Category: | Uncategorized |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET |
More Detail: | N/A |
DataSheet: | STP45N60DM6 Datasheet/PDF |
Quantity: | 1000 |
1000 +: | $ 2.54299 |
Series: | * |
Part Status: | Active |
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The STP45N60DM6 is a 600V power MOSFET manufactured by STMicroelectronics. It is a power MOSFET with a rated drain-source voltage of 45V and a rated drain current of 60A. The device offers very low on-state losses, excellent fast switching behaviour and high reliability. This makes the STP45N60DM6 an ideal choice for applications such as AC and DC motor drives, solar inverters, lighting and power supplies. It can also be used for light motor control applications.The STP45N60DM6 is a type of MOSFET, which stands for \'Metal Oxide Semiconductor Field Effect Transistor\'. This type of transistor is formed by three layers of semiconductor material: the source, the gate and the drain. The gate, which is the control element, is separated from the source and the drain by a thin insulating layer called a dielectric.When a voltage is applied to the gate, it produces an electric field which penetrates the dielectric layer and induces a current in the device. This current is known as the channel current; it acts as a conduit between the source and the drain, allowing the doping of electrons into the channel and allowing the flow of current from source to drain. When there is no voltage applied to the gate, the channel is in the zero-biased state, and only a small leakage current flows between the source and the drain. This leakage current, known as the off-state leakage current, is very low, typically in the range of 1mA.The on-state resistance of the STP45N60DM6 is very low, typically 15mΩ. This means that a very low voltage is required to induce a large amount of current from the source to the drain. This feature is especially useful for applications that require low switching losses, such as in motor drives and power supplies. The STP45N60DM6 is also capable of fast switching speeds; the typical turn-on time for the device is around 30ns and the turn-off time is around 50ns. This is ideal for applications that require quick response times and low power consumption.Finally, the STP45N60DM6 has an integrated reverse body diode which gives protection against supply spikes and overvoltage conditions. This is especially useful in applications such as motor drives, where overvoltage protection is essential. Overall, the STP45N60DM6 is a robust and reliable device, which is suitable for a wide range of applications. It is well suited to AC and DC motor drive applications, solar inverters, lighting and power supplies, and light motor control applications. Its low on-state losses, fast switching behaviour and high reliability make it an ideal choice for these applications.
The specific data is subject to PDF, and the above content is for reference
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STP40NS15 | STMicroelect... | -- | 1000 | MOSFET N-CH 150V 40A TO-2... |
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STP45N60DM2AG | STMicroelect... | 4.24 $ | 1000 | MOSFET N-CH 600V 34AN-Cha... |
STP40NF03L | STMicroelect... | -- | 1000 | MOSFET N-CH 30V 40A TO-22... |
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STP4N150 | STMicroelect... | 5.15 $ | 1000 | MOSFET N-CH 1500V 4A TO-2... |
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STP42N65M5 | STMicroelect... | 8.89 $ | 1000 | MOSFET N-CH 650V 33A TO-2... |
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STP46NF30 | STMicroelect... | -- | 214 | MOSFET N CH 300V 42A TO-2... |
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