STP4NK50ZD

Introduction

The STP4NK50ZD is an advanced single N-Channel field-effect transistor (FET). This MOSFET is designed at a 500 V voltage and offers a low Rth(j-a) for effective thermal management. Furthermore, its on-state resistance (RDS (on)) is low and its maximum drain current (Id) is up to 30 A, making it suitable for various applications. It also offers good switching performance by recovering from a “hard” turn-on state. In addition to these characteristics, the STP4NK50ZD MOSFET provides designers with excellent power efficiency.

Application Field and Working Principle

 The STP4NK50ZD is suitable for use as a switching device in many large current applications such as HID (High-Intensity Discharge) headlights and stage lighting, small to medium solar inverters, soft start circuits, etc. It can also be used in electronic ballast circuits, induction cookers, and LED lighting.

The working principle of the STP4NK50ZD MOSFET is based on the basic operation of a field-effect transistor. A gate voltage is applied to the gate terminal of the device, resulting in an inversion layer at the surface of the drain contact, forming an N-type channel between the source and drain. This enables current to flow from the source to the drain and from the drain to the source when required. The on-state resistance of the device is a function of the gate-to-source voltage (VGS), and the gate-to-source voltage range is from 4.5 V to 22 V.

 The STP4NK50ZD is a voltage-controlled device, and its drain current can be modulated by changing the gate-to-source voltage. The drain current is also limited by the drain-to-source voltage (VDS) and the device can support loads up to 500 V.

The power dissipation of the device depends on the on-state resistance, the drain-to-source voltage, and the load current. The total power dissipation of the transistor can be determined by multiplying the drain current (Id) by the drain-to-source voltage (VDS). The power loss through the transistor is the product of RDS(on) and the square of the load current (Id) multiplied by the drain voltage (VDS).

In order for the device to be effectively protected against short-circuit and ESD (electrostatic discharge) occurrences, proper care must be taken when installing the device, and it must be mounted on a suitably rated heat sink.

Conclusion

The STP4NK50ZD MOSFET is a highly efficient, 500 V single N-Channel FET, suitable for a variety of industrial and consumer applications. It is capable of switching high currents and offers good thermal management due to its low Rth(j-a). It also offers excellent switching speed and superb reliability.