STP42N60M2-EP Allicdata Electronics
Allicdata Part #:

497-15893-5-ND

Manufacturer Part#:

STP42N60M2-EP

Price: $ 7.77
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 34A EP TO220AB
More Detail: N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-...
DataSheet: STP42N60M2-EP datasheetSTP42N60M2-EP Datasheet/PDF
Quantity: 911
1 +: $ 7.06230
50 +: $ 5.79235
100 +: $ 5.22730
500 +: $ 4.37961
Stock 911Can Ship Immediately
$ 7.77
Specifications
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 250W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 100V
Vgs (Max): ±25V
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Series: MDmesh™ M2-EP
Rds On (Max) @ Id, Vgs: 87 mOhm @ 17A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP42N60M2-EP is a high voltage and high-speed super junction power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This device is ideal for use in high current applications due to its low-on resistance and low gate charge characteristics. This MOSFET has an excellent switching speed, enabling it to operate in pulse-width modulation (PWM) applications and is ideal for driving and controlling high-speed signals.

This MOSFET is powered by a 42Vdc source and operates in the enhancement mode. It has a drain-source voltage of up to 600V and can handle up to 42A. It can operate over a wide temperature range of -55 to +150 °C. This makes STP42N60M2-EP suitable for a variety of automotive and industrial applications requiring rugged performance in the presence of high temperatures.

The STP42N60M2-EP is a vertical double diffusion MOSFET (VDMOSFET) with an integrated gate resistor. This gate resistor is designed for both series and parallel wired applications and provides excellent electrical isolation. It also helps protect the MOSFET from temporary overvoltage conditions, reducing the number of off-states of the output.

The construction of a MOSFET is simple. It is composed of two electrodes, the source and the drain, which are separated by a thin (about 0.03 µm) insulating layer. This insulating layer is composed of a heavily doped semiconductor material, usually Silicon Dioxide. Above the insulation layer is a third electrical connection, called the gate, which is connected to the circuitry that controls the flow of current between the source and drain.

The STP42N60M2-EP MOSFET operates according to the principle of capacitive coupling. When a voltage is applied to the gate, the electric field generated between the gate and the source-drain region reduces the reverse bias voltage across the source-drain junction, thus allowing current to flow through the device. This makes the MOSFET useful for switching applications, as the current can be switched on and off by applying the appropriate voltage to the gate.

The STP42N60M2-EP is a versatile device and can be used in a variety of applications related to power control and switching. It is most commonly used in automotive systems, motor control circuits, DC-DC converters, and consumer electronics. It is also used in industrial power controllers, audio power amplifiers, and in the telecommunications industry.

In summary, the STP42N60M2-EP is a high voltage and high-speed super junction power MOSFET that is suitable for use in a variety of automotive and industrial applications. It operates according to the principle of capacitive coupling and can be used for power control and switching. It is easy to use and provides excellent performance in high current applications.

The specific data is subject to PDF, and the above content is for reference

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