Allicdata Part #: | 497-10651-5-ND |
Manufacturer Part#: |
STP4N62K3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 620V 3.8A TO-220 |
More Detail: | N-Channel 620V 3.8A (Tc) 70W (Tc) Through Hole TO-... |
DataSheet: | STP4N62K3 Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 4.5V @ 50µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 70W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 450pF @ 50V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 14nC @ 10V |
Series: | SuperMESH3™ |
Rds On (Max) @ Id, Vgs: | 1.95 Ohm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drain to Source Voltage (Vdss): | 620V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP4N62K3 is a N-channel MOSFET with a distinct advantage over many other MOSFETs, due to its very low On-resistance. The device has a breakdown voltage of 200V and it is suitable for use in various applications such as switching, power management, motor control and telecommunications. This article will discuss the application field of the STP4N62K3 and its working principle.
Application Field
The STP4N62K3 is a great choice for a variety of applications due to its low "on" resistance, which allows it to switch quickly and efficiently. This makes it ideal for motor control, power management, switch control, telecommunications, digital logic control and switching systems. In spite of its low On-resistance, it still offers high power handling capacity and reliability, ensuring that it can handle the tough switching processes safely. The low On-resistance has also made the device suitable for high-frequency pulse applications.
The device also has the ability to self-regulate, making it suitable for use in a wide range of varying applications where the current must be monitored. This self-regulation capability also helps to minimize power consumption, allowing the device to conserve energy when operated in a mobile system.
Working Principle
The STP4N62K3 is an N-channel MOSFET, which means that it has a conductive channel between the source and the drain terminals. This channel aids the flow of electrons, which moves the current through the device. The source and drain terminals, when connected together, form a diode. When a voltage is applied to the gate, it forms an electric field, creating a depletion region.
The gate terminal has two distinct NFET modes; the drain and the source. If the Gate voltage is applied in "source" mode, the gate electron charge will be equal to the drain terminal voltage and the N-channel is open, allowing electrons to flow from the source to the drain. If the gate voltage is applied in "drain" mode, the gate electron charge will be equal to the source voltage and the N-channel is closed. The current cannot flow through the channel, since there is no voltage difference.
The STP4N62K3 is also capable of being used as a switch, which is convenient for applications such as load switching, switching motors, switching solenoids and other load control applications. In switch mode, the drain terminal is held at a high voltage, while the source is held at a low voltage. When the gate voltage is applied to the device, the electric field created causes the channel to open, allowing electrons to flow through the channel, turning the device "on". When the gate voltage is removed, the electric field dissipates, and the N-channel closes, preventing electrons from flowing through it, and turning the device "off".
The STP4N62K3 is a great solution for a wide range of applications. Its low "on" resistance and its ability to self-regulate make it an excellent choice for power management and switch control. Its low power consumption also makes it suitable for mobile systems, and its high power handling capacity makes it a reliable option for tough switching processes.
The specific data is subject to PDF, and the above content is for reference
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