STP410N4F7AG

Rds On (Max) @ Id, Vgs:	--
Package / Case:	TO-220-3
Supplier Device Package:	TO-220
Mounting Type:	Through Hole
Operating Temperature:	--
Power Dissipation (Max):	365W (Tc)
FET Feature:	--
Vgs (Max):	--
Vgs(th) (Max) @ Id:	--
Series:	STripFET™ F7
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	180A (Tc)
Drain to Source Voltage (Vdss):	40V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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STP410N4F7AG is a brand N-channel enhancement mode MOSFET, this transistor is suitable for applications that require high-speed switching, such as the field of power electronics, and other applications that require high-efficiency operation.

Technical Description

The STP410N4F7AG is a N-channel enhancement mode MOSFET transistor that operates as a switching device. It has a maximum drain-source voltage of 400V, a drain-source breakdown voltage (BVDSS) of 375V, and a maximum drain current of 4A. The STP410N4F7AG also has a minimum on-resistance (RDSon) of 0.70Ω and a maximum junction temperature of 150°C.The STP410N4F7AG has a gate threshold voltage (VGS) of 3.2V and a maximum gate-source voltage of ±20V. The transistor has a fast switching speed with a turn-on time of 17ns and a turn-off time of 8ns. The STP410N4F7AG can handle high power loads up to 36W, making it an ideal choice for high-efficiency power electronics applications.

Applications

The STP410N4F7AG is an excellent choice for applications that require fast switching, such as DC-DC conversion, inverters, motor controllers, and more. It is also ideal for switching applications in high-efficiency power electronics such as solar inverters, battery chargers, and many other systems.The STP410N4F7AG is also suitable for switching applications in automotive applications, such as electronic power steering and electronic suspension systems. It can be used for lighting applications, and it is suitable for switch mode power supplies, AC-DC power supplies, and other related applications.

Working Principle

The STP410N4F7AG is a N-channel enhancement-mode MOSFET transistor that operates as a switch when a voltage is applied to the gate of the transistor. When a voltage is applied to the gate, the N-channel creates a conductive channel between the drain and the source, allowing current to flow from the source to the drain. When the voltage applied to the gate is removed, the N-channel closes and the current stops flowing.When used as a switching device, the STP410N4F7AG can be used to turn a device on or off by applying a voltage to the gate. This MOSFET device also has a high-speed switching capability, with a turn-on time of 17ns and a turn-off time of 8ns. This makes it ideal for high-speed switching applications, such as LED lighting applications, switching power supplies, and more.

Conclusion

The STP410N4F7AG is an excellent choice for high-speed switching applications in power electronics, such as DC-DC converters, motor controllers, solar inverters, and other applications that require high-efficiency operation. With a fast switching speed, it can handle large power loads up to 36W and is suitable for applications where low on-resistance is critical. The versatile STP410N4F7AG is an ideal choice for a wide range of applications.

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