Allicdata Part #: | 497-8791-5-ND |
Manufacturer Part#: |
STP42N65M5 |
Price: | $ 8.89 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 650V 33A TO-220 |
More Detail: | N-Channel 650V 33A (Tc) 190W (Tc) Through Hole TO-... |
DataSheet: | STP42N65M5 Datasheet/PDF |
Quantity: | 1000 |
1 +: | $ 8.08290 |
50 +: | $ 6.62861 |
100 +: | $ 5.98185 |
500 +: | $ 5.01184 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 190W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 4650pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 100nC @ 10V |
Series: | MDmesh™ V |
Rds On (Max) @ Id, Vgs: | 79 mOhm @ 16.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 33A (Tc) |
Drain to Source Voltage (Vdss): | 650V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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STP42N65M5 is a unique MOSFET device that offers an innovative solution for many applications where the need for high power, high performance, and high reliability is key. With an integrated structure and advanced process technologies, STP42N65M5 brings superior properties compared to other components. As a result, it is ideal for a variety of applications, ranging from automotive, industrial, and medical to aerospace industries.
The STP42N65M5 is a single N-channel enhancement-mode MOSFET device that is fabricated using a unique process that utilizes both silicon devices and an oxide-on-oxide hard coating for enhanced reliability. This device is capable of providing a high-speed on/off services in both high current and voltage devices with a maximum operating voltage of -60V. It can efficiently deliver up to 60 amps of continuous current, ensuring that power is provided efficiently.
The STP42N65M5 is an excellent choice for applications that require a robust and reliable switching device. It is capable of handling high voltage and large currents without any problems. Furthermore, it also has excellent electrical characteristics, making it suitable for the most demanding applications, such as motor control and power management. It is also ideal for automotive and industrial applications where high power is required.
Aside from its reliable characteristics, the STP42N65M5 also has a number of features that enable it to meet the demands of various applications. For example, its on resistance is 25V (~ 12 μA at 60V), which makes it suitable for use in high voltage and high current applications. In addition, its junction temperature can reach up to 200°C, allowing it to operate in extreme environmental conditions with minimal risk of failure. Finally, its power dissipation is also low, maximizing its energy efficiency.
The working principle of the STP42N65M5 is based on the gate capacitance of the MOSFET device. This gate capacitance allows the voltage of the gate to be directly related to the current that is flowing within the device. As a result, it basically acts as a switch capable of controlling the current in a system. Depending on the type of MOSFET, the gate capacitance can range from very low (nMOSFET) to very high (pMOSFET). The STP42N65M5 uses a high gate capacitance, allowing it to handle higher voltages and currents than its counterparts.
In conclusion, the STP42N65M5 is a versatile single N-channel enhancement-mode MOSFET device that is capable of providing high performance, reliability and energy efficiency for a wide range of applications. Its robust and reliable design, along with its high operating voltage and low on-resistance, make it an ideal choice for various demanding applications, such as motor control and power management. Finally, its working principle is based on the gate capacitance of the MOSFET device, allowing it to efficiently control the current in a system.
The specific data is subject to PDF, and the above content is for reference
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