STP4NK60Z Allicdata Electronics
Allicdata Part #:

497-3191-5-ND

Manufacturer Part#:

STP4NK60Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 600V 4A TO-220
More Detail: N-Channel 600V 4A (Tc) 70W (Tc) Through Hole TO-22...
DataSheet: STP4NK60Z datasheetSTP4NK60Z Datasheet/PDF
Quantity: 370
Stock 370Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 2 Ohm @ 2A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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STP4NK60Z is a N-channel Field Effect Transistor (FET) used for power switching applications. This transistor is suitable for use in voltage-regulated switch-mode power supplies, DC-DC converters and AC power supply circuits. In particular, the STP4NK60Z was designed to operate at higher voltages and frequencies, allowing it to be used in more demanding applications.

In a basic way, an FET works by controlling the flow of current across its drain and source terminals. A voltage applied to the gate terminal controls the current. When a positive voltage is applied to the FET’s gate terminal, it increases the conductivity of the FET between the source and drain terminals, allowing current to flow freely. Conversely, when the voltage applied to the gate terminal is zero or negative, the FET’s source-drain path is opened and no current can flow.

The STP4NK60Z is a power MOSFET transistor, which means it is designed to handle higher power levels than other types of FETs. The STP4NK60Z has an on-resistance of 3.2 m Ohms, a breakdown voltage of 650V, and features a fast switching speed and low gate charge. These features make the STP4NK60Z well-suited to applications such as motor control, switch-mode power supplies, and DC-DC converters.

The STP4NK60Z also has several protection features that help make it a safe transistor to use. It has an integrated body diode which effectively clamps excessive voltages and protects against inductive loads. It also has a built-in thermal shutdown feature to protect against excessive temperatures, and an overvoltage protection feature which can be used to limit the maximum voltage that can be applied to the FET’s gate terminal.

The STP4NK60Z is therefore a versatile, high-performance transistor that is suitable for a wide variety of power switching applications. Its versatility, high performance, and integrated protection features make it an ideal choice for applications such as motor control, switch-mode power supplies, and DC-DC converters.

The specific data is subject to PDF, and the above content is for reference

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