Allicdata Part #: | 497-2781-5-ND |
Manufacturer Part#: |
STP4NB80 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 800V 4A TO-220 |
More Detail: | N-Channel 800V 4A (Tc) 100W (Tc) Through Hole TO-2... |
DataSheet: | STP4NB80 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 100W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 920pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 29nC @ 10V |
Series: | PowerMESH™ |
Rds On (Max) @ Id, Vgs: | 3.3 Ohm @ 2A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 4A (Tc) |
Drain to Source Voltage (Vdss): | 800V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP4NB80 power MOSFET is a device that is used in many applications and is designed to process and control power levels within components. It has a power rating of up to 800 volts, allowing for robust designs for use in a variety of electronic applications. The STP4NB80 is a dual N-channel power MOSFET, with inherently low on-resistance and low gate charge characteristics. Its high current capability and enhanced ESD protection make it an ideal device for powering high-power and data-intensive electronic systems.
One of the most common uses of the STP4NB80 power MOSFET is in the area of audio amplification. It can be used to regulate input and output levels in a amplifier to provide maximum power output and sound clarity. The device is also used in applications such as DC/DC converters, power switches, motor drivers and in switching and protection applications.
The STP4NB80 offers a variety of features that make it an attractive choice for applications. It is designed to be smaller and more efficient than other transistor devices, reducing circuit board size and complexity. Additionally, it is gate-charge-matched, meaning that it is able to regulate power levels over a wide range of frequencies. It is also capable of high speed operation and can operate up to 15A with an input voltage of 800V.
The STP4NB80 power MOSFET works through the use of a MOSFET device. A MOSFET is an insulated-gate field-effect transistor, which works by allowing the flow of electric current through either an n-type or p-type semiconductor material. The behavior of the transistor is determined by the voltage that is applied to the gate terminal of the device, which creates an electric field within the device, which in turn changes the resistance between the drain and source terminals, thereby controlling the flow of current.
The STP4NB80 MOSFET has several distinct advantages over other types of transistors. It is relatively low cost and low on-resistance, making it a popular choice for many applications. Additionally, it has a high-switching-speed and low gate charge characteristics, making it ideal for high-power and data-intensive applications. Finally, it is highly reliable and offers enhanced ESD protection.
In summary, the STP4NB80 power MOSFET is an ideal choice for many applications. It offers a combination of features, such as low cost, low on-resistance, and high-switching-speed, which make it an essential component in many electronic systems. Its high reliability, combined with its enhanced ESD protection, make it an ideal device for powering high-power and data-intensive electronic systems.
The specific data is subject to PDF, and the above content is for reference
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