STP45NF06

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-220-3
Supplier Device Package:	TO-220AB
Mounting Type:	Through Hole
Operating Temperature:	175°C (TJ)
Power Dissipation (Max):	80W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	980pF @ 25V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	58nC @ 10V
Series:	STripFET™ II
Rds On (Max) @ Id, Vgs:	28 mOhm @ 19A, 10V
Drive Voltage (Max Rds On, Min Rds On):	10V
Current - Continuous Drain (Id) @ 25°C:	38A (Tc)
Drain to Source Voltage (Vdss):	60V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tube

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<p>The STP45NF06 is a type of n-channel Field Effect Transistor (FET). FETs are known as unipolar transistors because their operation is based on a single type of charge carrier. According to the physical structure of their source and drain, they are commonly divided into three categories: the Junction FET (JFET), the Metal Oxide Semiconductor FET (MOSFET), and the Insulated-Gate Field Effect Transistor (IGFET). The STP45NF06 belongs to the MOSFET family, which is basically composed of three terminals: the source, the drain, and the gate. </p><p>The STP45NF06 is a n-channel FET that was released in the ‘90s by STMicroelectronics. It is an unconventional device compared to the more standard n-channel FETs of its time, as it features low internal capacitance, low resistance and an ultra-high frequency of operation (up to 600MHz). It is also characterized by its pulse width modulation capabilities and its low on-resistance. In general, this FET offers very good switching performances and is well-suited for many low-power applications that require fast switching from a relatively small package. </p><p>The STP45NF06’s application field is quite broad. In fact, the device is able to handle a wide range of signal types, ranging from analog to digital. Some applications involve the use of the device as a signal amplifier or signal conditioner. Additionally, the device is commonly used in switching applications, due to its low on-resistance and fast switching response. Furthermore, the device is suitable for use in a wide range of power switching applications, such as AC/DC converters and DC/DC converters. Finally, the device is often used for heavy load and for low-voltage applications, due to its low internal capacitance. </p><p>The working principle behind the STP45NF06 is based on the principle of the n-channel FET. A FET is basically a three-terminal device, composed of a source, a drain, and a gate. The device operates using a voltage bias, meaning that the voltage applied to the gate will determine the amount of current that passes through the source to the drain. This is known as the drain-source current (ID), and it is determined by the gate-source voltage (VGS). The source and the drain regions can either be metallic or formed by doped semiconductor materials. </p><p>The STP45NF06 operates in the depletion mode. This means that when no voltage is applied to the gate, the source and the drain are connected together. This allows current to flow between the source and the drain, and therefore it behaves like a closed switch. When voltage is then applied to the gate, it will create an electric field which will cause the source-drain channel to narrow and the depletion of the electrons from the channel region. This, in turn, restricts the current flowing from the source to the drain; thus, the device behaves like an open switch.</p><p>In summary, the STP45NF06 is a n-channel MOSFET that offers very good switching performances and is suitable for use in a wide range of signal manipulation and power switching applications. It is characterized by its low resistance and capacitance, as well as its fast switching response.</p>

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