| Allicdata Part #: | 497-16128-5-ND |
| Manufacturer Part#: |
STP45N60DM2AG |
| Price: | $ 4.24 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | STMicroelectronics |
| Short Description: | MOSFET N-CH 600V 34A |
| More Detail: | N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-... |
| DataSheet: |  STP45N60DM2AG Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | $ 3.85560 |
| 50 +: | $ 3.10048 |
| 100 +: | $ 2.82492 |
| 500 +: | $ 2.28748 |
| 1000 +: | $ 1.92920 |
| Vgs(th) (Max) @ Id: | 5V @ 250µA |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 250W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 100V |
| Vgs (Max): | ±25V |
| Gate Charge (Qg) (Max) @ Vgs: | 56nC @ 10V |
| Series: | Automotive, AEC-Q101, MDmesh™ DM2 |
| Rds On (Max) @ Id, Vgs: | 93 mOhm @ 17A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
| Drain to Source Voltage (Vdss): | 600V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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The STP45N60DM2AG is a single-transistor device. This type of device is made up of two distinct parts, a semiconductor layer and a gate. The semiconductor layer is an N-type material with an insulated gate, whereas the gate is a P-type material. The gate is connected to the semiconductor layer in such a way that when a negative voltage is applied to the gate, charge carriers are pushed aside and current is prevented from flowing between the source and drain. Conversely, when a positive voltage is applied to the gate, charge carriers are attracted and currents are allowed to flow between the source and drain.
The STP45N60DM2AG is widely used in applications such as motor drives, power supplies, switching power amplifiers, and power distribution systems. Because of its high voltage rating, low conduction and switching losses, it can operate with low power loss and linear current regulation. This can result in improved efficiency for applications such as motor drives.
The STP45N60DM2AG offers an excellent combination of ON-state voltage drop and maximum current ratings for a device of its size and is suitable for applications where low conduction or switching losses are required. The device has a breakdown voltage rating of 600V and a maximum drain current of 45A. Its maximum power dissipation is 112.5 watts.
Additionally, the STP45N60DM2AG has a wide frequency range of 0-100 kHz and it is capable of handling high switching frequency power loads. Additionally, its high switching speed helps to reduce switching loss. Due to its low gate charges, the device has low EMI performance and can be used in both AC and DC switching applications. In addition, its low body diode reverse recovery time helps reduce the total conduction losses in the switching components, resulting in improved system efficiency.
To summarize, the STP45N60DM2AG is an excellent choice for applications requiring low on-state voltage drop, reliable high-speed switching performance, low power dissipation, and improved efficiency. Its wide frequency range, high switching speed and low body diode reverse recovery time results in improved system efficiency.
The specific data is subject to PDF, and the above content is for reference
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