STP4NK80Z Allicdata Electronics
Allicdata Part #:

497-3192-5-ND

Manufacturer Part#:

STP4NK80Z

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 800V 3A TO-220
More Detail: N-Channel 800V 3A (Tc) 80W (Tc) Through Hole TO-22...
DataSheet: STP4NK80Z datasheetSTP4NK80Z Datasheet/PDF
Quantity: 2264
Stock 2264Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 80W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 575pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 22.5nC @ 10V
Series: SuperMESH™
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drain to Source Voltage (Vdss): 800V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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The STP4NK80Z is a vertical MOS Field-Effect Transistor (MOSFET) device. It is part of STMicroelectronics’s power MOSFET family and is used in applications ranging from power supplies, converters, and motor control to audio and industrial systems. This transistor can be used for either high or low voltage operations.

MOSFETs are transistors with metal oxide semiconductor (MOS) gates. These transistors have an insulated gate which acts as a control input to the transistor. When the gate is charged, an electric field is created between the source and drain that allows current to flow. MOSFETs are often used as an alternative to bipolar transistors in controlling as they require relatively less power to operate.

The STP4NK80Z belongs to STMicroelectronics’s N-channel, Silicon-gate Power MOSFET family. This device is a robust and efficient transistor, with a low input capacitance. It has an on-resistance rDS (on) of about 0.8 Ω and a breakdown voltage of 800 V. It is designed for high performance applications where efficient and economical solutions are required.

The STP4NK80Z is suitable for driving both digital and analog loads. It is designed for operations at high frequency, with good results in both Class D and AB amplifiers. As it is suitable for both high and low current loads, it can be used for switching extremely small currents as well. This device has built-in protection features, such as preventing thermal runaway and reverse drain-source voltage. This protection allows the device to be used in sensitive applications, such as telecommunications and computers.

The STP4NK80Z is a very small MOSFET transistor and can be used in a variety of applications such as lighting control, motor control, and HVAC systems. With the built-in protection features, it can be used in applications with demanding requirements. As the transistor can handle high frequencies, it is suitable for applications such as radio frequencies and high-definition audio amplifiers. This device is also suitable for use in automotive and consumer applications such as Power Supplies, Converters, and Motor Controllers.

The working principle of the STP4NK80Z transistor is simple. A bias voltage is applied to the gate which controls the drain-source connection between the source and the drain. The current flowing through the drain is controlled by the voltage applied to the gate. As the voltage increases, the current flowing through the drain decreases. This makes it suitable for applications such as motor control, where the current needs to be accurately controlled.

The STP4NK80Z is an efficient and reliable transistor suitable for a wide range of applications. Due to its small size and low input capacitance, it is suitable for high frequency operations. With the built-in protection features, it can be used in sensitive applications. As it can handle both high and low current loads, it is suitable for a variety of different uses. With its robust and reliable design, it can be used in a wide range of applications with demanding requirements.

The specific data is subject to PDF, and the above content is for reference

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