Allicdata Part #: | 497-2719-5-ND |
Manufacturer Part#: |
STP4NB50 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 500V 3.8A TO-220 |
More Detail: | N-Channel 500V 3.8A (Tc) 80W (Tc) Through Hole TO-... |
DataSheet: | STP4NB50 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220AB |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 80W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 400pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 21nC @ 10V |
Series: | PowerMESH™ |
Rds On (Max) @ Id, Vgs: | 2.8 Ohm @ 1.9A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Tc) |
Drain to Source Voltage (Vdss): | 500V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The STP4NB50 is one of the most widely used power MOSFET transistors available today. It is a single N-channel, enhancement-mode power MOSFET that is generally used for switching and amplified output purposes. The STP4NB50 offers a greatly improved performance over conventional transistors due to its high current handling capabilities, low droop, and fast switching speeds.
The STP4NB50 can be used in applications such as switch mode power supplies, relay and chopper circuits, and DC-DC converters. It is commonly used to provide high-power switching capabilities in applications where space and weight are critical considerations. Additionally, the transistor can also be used to provide buffered amplifiers, low-power logic systems, and low-input voltage logic driver circuits.
The STP4NB50 is designed to use enhancement-mode power MOSFETs, which offers fast switching times and low on-state resistance. This makes the STP4NB50 ideal for high-power switching applications. The STP4NB50 also features an integrated shunt regulator, which provides a high degree of accurate temperature regulation and protection for the transistor.
The STP4NB50 has a number of important safety features. It has a built-in under-voltage lockout feature that prevents overloads that could cause the transistor to overheat. This feature helps to ensure that the transistor will not be damaged due to excessive current. Additionally, the STP4NB50 also features an over-temperature protection circuit, which helps to prevent overheating due to prolonged exposure to high temperatures.
The working principle of the STP4NB50 is relatively simple. When the gate voltage is below the threshold voltage, the transistor is in its off-state. When the gate voltage exceeds the threshold voltage, the transistor is said to be in its on-state. Once the transistor is in its on-state, current will flow through the transistor and can be controlled by adjusting the gate voltage.
In summary, the STP4NB50 is one of the most popular power MOSFET transistors available today. It offers excellent performance and is ideal for numerous applications such as switch mode power supplies, relay and chopper circuits, and DC-DC converters. Additionally, it also has a number of important safety features, such as an integrated shunt regulator and an over-temperature protection circuit. Furthermore, the STP4NB50 works on the principle of controlling the flow of current through the transistor by adjusting the gate voltage.
The specific data is subject to PDF, and the above content is for reference
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