Allicdata Part #: | 497-14573-5-ND |
Manufacturer Part#: |
STP45N10F7 |
Price: | $ 1.91 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 100V 45A TO-220 |
More Detail: | N-Channel 100V 45A (Tc) 60W (Tc) Through Hole TO-2... |
DataSheet: | STP45N10F7 Datasheet/PDF |
Quantity: | 353 |
1 +: | $ 1.73250 |
50 +: | $ 1.39469 |
100 +: | $ 1.25521 |
500 +: | $ 0.97626 |
1000 +: | $ 0.80891 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 60W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1640pF @ 50V |
Vgs (Max): | 20V |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 10V |
Series: | DeepGATE™, STripFET™ VII |
Rds On (Max) @ Id, Vgs: | 18 mOhm @ 22.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 45A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP45N10F7 is a N-Channel Field-effect Transistor (FET) featuring robust voltage/current capability and low on-resistance. It is one of the most widely used FETs within the current product range. This particular model is a single FET, which has a low on-resistance of 45mohm and a high breakdown voltage of 900V.
The STP45N10F7 is mainly used in power supply applications, such as high power audio amplifiers, switching regulators, motor drives, and power management applications. Thanks to its robust and high current/voltage capabilities, the STP45N10F7 is also suitable for automotive, medical, and home appliance applications. Its low on-resistance and high voltage rating make it suitable for a wide range of applications.
One of the main features of the STP45N10F7 is its working principle. It functions as a power switch that switches on and off quickly and efficiently. The FET’s gate is the control component that determines whether the FET is in its ‘on’ or ‘off’ state. When the gate voltage is positive with respect to the source voltage, the FET is in the \'on\' state and carries a large current. On the other hand, when the gate voltage is negative with respect to the source voltage, the FET is in the \'off\' state and carries no current.
The STP45N10F7 is also equipped with protection mechanisms to guard against various malfunctions. The source-drain diode, which is built into the FET, prevents the drain voltage from collapsing during output shutdown. Meanwhile, the built-in thermal protection prevents the FET from overheating and protects the circuit from catastrophic failure. Finally, the overcurrent protection prevents the FET from rendering too much current.
In conclusion, the STP45N10F7 is a power switch transistor with robust voltage/current capability, low on-resistance, high breakdown voltage, and various protection mechanisms. It is suitable for various applications, including power supply, automotive, medical, and home appliance applications. Its working principle is based on the gate voltage being positive with respect to the source voltage for the \'on\' state and negative for the \'off\' state.
The specific data is subject to PDF, and the above content is for reference
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