Allicdata Part #: | 497-14222-5-ND |
Manufacturer Part#: |
STP40N60M2 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | STMicroelectronics |
Short Description: | MOSFET N-CH 600V 34A TO220 |
More Detail: | N-Channel 600V 34A (Tc) 250W (Tc) Through Hole TO-... |
DataSheet: | STP40N60M2 Datasheet/PDF |
Quantity: | 697 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 250W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2500pF @ 100V |
Vgs (Max): | ±25V |
Gate Charge (Qg) (Max) @ Vgs: | 57nC @ 10V |
Series: | MDmesh™ II Plus |
Rds On (Max) @ Id, Vgs: | 88 mOhm @ 17A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 34A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tube |
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The STP40N60M2 is a N-Channel MOSFET with a low drain-source on-resistance. It\'s optimized to operate in high frequency switching applications as a result of its excellent switching performance. It belongs to the STMicroelectronics S11 family of N-Channel MOSFETs.
The STP40N60M2, which is manufactured from STMicroelectronics, is a field-effect transistor (FET) with insulated gate and two JFET source/drain terminals. It is designed to provide the excellent performance needed for driving today\'s highest-speed digital ICs and memory ICs. It can be used in low power applications such as voltage regulators, motor drives, and inverters, but also in high power applications such as welding, rectification, and lighting control.
The STP40N60M2 is a single N-Channel MOSFET with a drain-source current capability of 40A, a threshold of 0.92V, an RDSon of 0.5ohm and an operating voltage of 66V. The low RDSon for this device makes it suitable for applications requiring low switching losses. It is excellent for high current and low frequency switching applications, and can also be used in power switch applications.
The STP40N60M2 has a very low input capacitance and an extremely fast switching performance. It is capable of operating at frequencies well beyond 1MHz. It is also capable of withstanding high pulse and dv/dt rates, making it ideal for high frequency switching applications. This makes the STP40N60M2 an excellent choice for switching power supplies, motor drives, lighting controllers, and other high power applications.
The STP40N60M2 has been designed with a special gate-edge protection feature that minimizes gate-leakage current and surface leakage current. This gate-edge protection feature also protects the gate from high ESD voltages, which makes it suitable for use in applications where ESD protection is required. It also has an integrated voltage clamping feature which limits the voltage across the drain-source terminal to an acceptable level.
The STP40N60M2 provides excellent performance in terms of its low capacitance and low resistance. This enables it to operate at high frequencies, making it ideal for switching applications requiring fast response times. Additionally, it has a low on-resistance and a high blocking voltage rating. This combination of features makes the STP40N60M2 ideal for use in power switching applications.
In conclusion, the STP40N60M2 is an excellent choice for a variety of applications. It is suitable for use in high power and low power applications, as well as for high frequency, low frequency, and power switch applications. Its low input capacitance, low resistance, and high blocking voltage rating make the STP40N60M2 an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
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