STP40NF03L Allicdata Electronics
Allicdata Part #:

497-3187-5-ND

Manufacturer Part#:

STP40NF03L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: STMicroelectronics
Short Description: MOSFET N-CH 30V 40A TO-220
More Detail: N-Channel 30V 40A (Tc) 70W (Tc) Through Hole TO-22...
DataSheet: STP40NF03L datasheetSTP40NF03L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 70W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 25V
Vgs (Max): ±16V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Series: STripFET™
Rds On (Max) @ Id, Vgs: 22 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Not For New Designs
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

STP40NF03L is a widely used N-channel logic level MOSFET. It has an extremely low gate threshold voltage and low RDS(on), which makes it possible to be used in various types of applications. In addition, it has a very tight manufacturing margin, resulting in an extremely compact design.

The STP40NF03L MOSFET can be used in various kinds of power transmission and control applications such as switch mode power supplies, DC-DC converters, motor control circuits, and various logic circuits. It can also be used for other types of power-switching and low-voltage circuitry such as battery switching and low-voltage DC systems.

The manufacturing process for the STP40NF03L MOSFET is a special process called “Trench Gate”. This process involves the creation of a series of trenches in the gate region in order to create a thin gate oxide layer and low contact area between the gate and the source/drain regions. This process results in an extremely fast switching times and an increased current handling capability.

The working principle behind the STP40NF03L MOSFET is relatively simple. When a positive voltage is applied to the gate terminal, the gate oxide undergoes a threshold voltage, which in turn causes a conduction channel to be formed between the source and the drain regions. This conduction channel enables current to flow between the source and drain regions. The amount of current that can flow through the channel is determined by the gate voltage applied.

The advantages of using the STP40NF03L MOSFET in power transmission and control applications are numerous. It is able to provide fast switching times, high current handling capability, and excellent power dissipation. Additionally, since it is a logic level MOSFET, it can be easily interfaced with digital circuits. This makes it an ideal choice for various types of logic level designs.

In conclusion, the STP40NF03L MOSFET is an excellent choice for various types of power transmission and control applications due to its small size, low gate threshold voltage, and highly efficient working principle. Its ability to provide fast switching times and high current handling capabilities make the STP40NF03L an ideal choice for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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