SUM90140E-GE3 Discrete Semiconductor Products

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The SUM90140E-GE3 is a high-performance Logic Level N-channel Enhancement Mode MOSFET, manufactured using advanced intermetal dielectric process technology. It features very low on-state resistance, low drive voltage, and tight parameter distribution, making it ideal for high-current, low voltage applications. This unique technology and construction also makes the SUM90140E-GE3 very rugged and reliable, making it a great choice for high-volume, professional-grade applications.

First and foremost, the SUM90140E-GE3 is designed for use in a variety of devices and applications. Commonly, it is used in high-power switching circuits, such as DC-DC converters and high-efficiency power supplies. It is also suitable for low voltage devices, such as switching regulators and high-speed data converters. It can also be used in a variety of semi-conductor devices, such as portable and stationary gate drives and logic level control circuits.

The heart of the SUM90140E-GE3 is its MOSFET (MetalOxide Semiconductor Field Effect Transistor) technology, which allows it to switch on and off quickly, without needing any additional stimulation. A MOSFET consists of four terminals: gate, source, drain, and body. The gate is connected to the input side, and when a voltage is applied to the gate, this creates an electric field between the source and drain. This electric field causes a current to flow, allowing the switch to be switched on or off.

The SUM90140E-GE3 utilizes a logic-level gate to enable additional control of the MOSFET’s on-state voltage. This logic-level gate is designed to open or close the MOSFET more quickly, allowing precise control of the on and off states. This improved on/off performance allows for higher current switching and improved efficiency.

The SUM90140E-GE3’s low on-state resistance (1.4mΩ at 25 °C) allows for high current switching and low losses. Low drive voltage is also beneficial when powering devices which require low supply voltage. The SUM90140E-GE3 also has a tight parameter distribution, which ensures the device will accurately switch on and off when requested.

One of the unique features of the SUM90140E-GE3 is its high-temperature performance. This allows the device to operate in temperatures up to 175 °C without degradation. This makes it an ideal choice for use in high-temperature environments, such as in automotive applications.

In conclusion, the SUM90140E-GE3 is a versatile and reliable MOSFET which combines low on-state resistance, low drive voltage, and tight parameter distribution. This allows the device to be used in a wide variety of applications, from power supplies to high-temperature devices. Its logic-level gate technology also means it can switch quickly, providing precise control of the on and off states.

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