SUM90N06-5M5P-E3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SUM90N06-5M5P-E3 is a type of single MOSFET, short for Metal Oxide Semiconductor Field Effect Transistors. It has a wide range of applications thanks to its high performance and cost-effectiveness. This article will cover the applications and working principle of the SUM90N06-5M5P-E3.

The SUM90N06-5M5P-E3 has a wide range of applications, mainly due to its compact size and its low power consumption. It can be used in various fields such as power management, high-speed logic switching, battery operations, motor control, automotive and medical applications. Some of its common applications are in medical equipment, high-voltage power supplies, digital circuits, motor drives and inverter circuits. It is an ideal choice for efficient power management as it has a low reverse leakage current. It can also be used in analog circuits for its low input capacitance.

In terms of its working principle, the SUM90N06-5M5P-E3 uses a voltage-controlled structure that is different from conventional transistors. It has a three-terminal structure with a gate, source and drain. As the gate voltage increases, a field effect will be created that attracts electrons between the source and drain, thus allowing current to flow. It can be used both as an enhancement-type and depletion-type device, depending on the gate voltage. The gate voltage can be adjusted to improve the device’s characteristics like static resistivity, charge carrier mobility and breakdown voltage.

The SUM90N06-5M5P-E3 is relatively insensitive to temperature compared to other MOSFETs and it has a low self-heat generation. It is also suitable for higher-speed operations due to its low capacitance values. The device is also capable of delivering high output power and it has excellent thermal stability. In addition, it has a high immunity to destructive dV/dt behavior.

In conclusion, the SUM90N06-5M5P-E3 is a versatile and reliable device which can be used in a variety of application fields, from high-speed logic switching to motor control. Its voltage-controlled structure offers enhanced performance and its low input capacitance makes it an ideal choice for analog circuits. It is also capable of delivering high output power, with excellent thermal stability and low self-heat generation. Lastly, its high immunity to destructive dV/dt behavior makes it a reliable choice for power management applications.

The specific data is subject to PDF, and the above content is for reference