Allicdata Part #: | SUM90P10-19-E3-ND |
Manufacturer Part#: |
SUM90P10-19-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET P-CH 100V 90A D2PAK |
More Detail: | P-Channel 100V 90A (Tc) 13.6W (Ta), 375W (Tc) Surf... |
DataSheet: | SUM90P10-19-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4.5V @ 250µA |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package: | TO-263 (D2Pak) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 13.6W (Ta), 375W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 12000pF @ 50V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 330nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 20A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 90A (Tc) |
Drain to Source Voltage (Vdss): | 100V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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Summary
This article examines the application field and working principle of SUM90P10-19-E3. It is categorized under Transistors - FETs, MOSFETs - Single.
Introduction
SUM90P10-19-E3 is a type of discrete insulation gate bipolar transistor (IGBT) that has been developed by Infineon Technologies. This type of IGBT is designed for high frequencies and applications in industrial and consumer electronics. The high operating temperature and robustness of this type of IGBT makes it ideal for these types of applications.
Application Field
SUM90P10-19-E3 is a high power insulated gate bipolar transistor (IGBT) that is well-suited for a wide range of industrial and consumer electronic applications. This type of IGBT is suitable for driving motors, lighting systems, and other high-power devices. It is also suitable for automotive applications such as motor control, switching, and power conversion. Furthermore, it can be used as part of a dimming system in both interior and exterior automotive lighting. Another major application of this type of IGBT is in power converters, inverters, and battery charging systems.
Working Principle
The working principle of the SUM90P10-19-E3 is based on the so-called insulated gate bipolar transistor, or IGBT. This type of transistor is constructed by combining a bipolar junction transistor with an insulated gate field-effect transistor (IGFET). This combination of field-effect transistor and a bipolar junction transistor, or two transistors, constitutes the IGBT. The insulated gate enables an electric field to control the flow of current on a semiconductor device. The flow of current is directed by the electric field, allowing the IGBT to function as a switch and enabling the control of a high current. The IGBT also offers power switching that is efficient and low in losses.
Conclusion
SUM90P10-19-E3 is a type of discrete IGBT that is developed by INFIONS Technologies and offers high power switching along with low losses and high efficiency. It is designed for high frequency applications and suitable for driving motors, lighting systems, and other high-power devices, as well as automotive applications such as motor control, switching, and power conversion. The working principle of the SUM90P10-19-E3 utilizes the combination of a field-effect transistor and a bipolar junction transistor, which enables the control of current on a semiconductor device.
The specific data is subject to PDF, and the above content is for reference
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