SUM90N10-8M2P-E3 Discrete Semiconductor Products

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SUM90N10-8M2P-E3 is a type of transistor called a Field-Effect Transistor (FET). FETs are a type of transistor that uses an electric field to control the flow of current between the source and the drain pins. The SUM90N10-8M2P-E3 is a type of FET called a MOSFET. These devices differ from other types of FETs (like junction field-effect transistors (JFETs)) in that they have a gate terminal that controls the current flow between the source and the drain. MOSFETs are well-suited for use in amplifier and digital circuitry, especially in applications where low input current is desired.

The SUM90N10-8M2P-E3 is a single MOSFET device; that is, it has a single source and drain, as opposed to a dual MOSFET, which has two sources and two drains. The device has a drain-source voltage of up to 90 volts, a drain current of up to 10 amps, and a maximum power dissipation of 8 milliwatts. The gate-source voltage can be up to +/-2 volts for an N-channel FET or up to +/-4 volts for a P-channel FET. The device is also specified to have an on-resistance of 0.008 ohms and a maximum continuous drain current of 8 amps.

The device is designed for use in applications where a low-current, wide-band-gap power supply is necessary. Examples of such applications include motor and solenoid control, digital and analog signal processing, and low-voltage switching circuits. It is also suitable for use in pulsed applications, such as laser diode driver circuits and dimming controls.

The working principle of a MOSFET device, such as the SUM90N10-8M2P-E3, is fairly simple. A voltage applied to the gate terminal creates an electric field that attracts electrons from the source to the drain, creating a conductive channel between the two. The magnitude of the electric field is determined by the applied voltage and the gate oxide thickness, which determines the size of the channel. By controlling the voltage applied to the gate terminal, the current flow can be precisely controlled.

In summary, the SUM90N10-8M2P-E3 single MOSFET is designed for use in applications where a low-current, wide-band-gap power supply is necessary. It has a drain-source voltage of up to 90 volts, a drain current of up to 10 amps, and a maximum power dissipation of 8 milliwatts. Its working principle is based on the creation of an electric field between the source and the drain, which is controlled by the voltage applied to the gate terminal.

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