SUM90N03-2M2P-E3 Discrete Semiconductor Products

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The SUM90N03-2M2P-E3 is a single high voltage Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). It is part of a family of MOSFETs designed by Vishay Intertechnology to offer a low on-resistance, fast switching speed and robust protection.

This particular MOSFET is ideally suited for use in high side load switch applications. It is designed to provide an excellent level of protection from both overvoltage and overload conditions. It also features excellent device-level thermal conduction for improved heat distribution and reduced junction temperatures.

The SUM90N03-2M2P-E3 has a maximum drain-source voltage rating of 30V, and a continuous drain current rating of 3A. Its highly efficient switch mode design allows it to operate at up to 20V and up to 10A. Its on-resistance rating is 9.3mΩ, with a maximum voltage drop of 0.4V.

The SUM90N03-2M2P-E3 MOSFET is designed to work with a wide range of applications. These include lights and lighting controls, motor controls, smart meters, power switching and motor control circuits, AC-DC converters, DC-DC converters, LED drivers and clock generators.

The SUM90N03-2M2P-E3 features an internal gate resistor, which helps reduce ESD susceptibility. This device is available in a standard 3-pin configuration on a TO-220 package, and operates within a temperature range of -55°C to 150°C. It is also RoHS compliant.

The working principle of the SUM90N03-2M2P-E3 MOSFET is quite simple. When the gate voltage of the MOSFET is increased, the current flow between its source and drain gradually increases, until it reaches its maximum current level when the gate voltage is at its peak. The reverse is also true - when the gate voltage is reduced, the current flow between the source and drain decreases, until it eventually reaches zero when the gate voltage is at its minimum. This is known as the “triode region” of a MOSFET, and is responsible for its low on-resistance and fast switching speed.

In summary, the SUM90N03-2M2P-E3 is a single high voltage MOSFET device designed for high side load switch applications. It features excellent device-level thermal conduction, a low on-resistance rating and fast switching speed, and is highly efficient. It is also RoHS compliant and works within a temperature range of -55°C to 150°C. Its working principle is based on a “triode region” of operation, where the current flow between its source and drain increases as the gate voltage is increased, and decreases as the gate voltage is reduced.

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