SUM90220E-GE3 Discrete Semiconductor Products

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The SUM90220E-GE3 is a silicon N-channel enhancement-mode metal-oxide-semiconductor field-effect transistor (MOSFET). It is a voltage-controlled, three-terminal solid-state device that regulates the voltage and current transfer between its two nodes,and is particularly useful for power applications. The SUM90220E-GE3 is a single MOSFET and can be used for general-purpose as well as power-level applications.

The device is designed to provide very high levels of input impedance, outputs with low on-state resistance and excellent current-handling capability, making it an ideal choice for a variety of applications, including switching large currents, voltage regulation, motor control and power factor correction. It also operates with very low gate-source voltages, enabling it to be used in a variety of operating conditions. This includes operating in a high-voltage environment, such as motor-control applications.

At the heart of the device is its MOSFET structure, which consists of two p-type semiconductor layers separated by a very thin insulating layer. This structure acts as a voltage-controlled, three-terminal switch, enabling the device to be used for a variety of switching functions. It also provides very low leakage currents, making it suitable for a variety of high-power applications.

The device is capable of handling large amounts of current, making it ideal for switching high-power loads. It has a maximum operating temperature of 200°C, ensuring its suitability for a variety of industrial and automotive applications. Additionally, the high-speed switching capabilities of the SUM90220E-GE3 make it suitable for high-speed applications, such as those found in motor-control systems.

The main advantage of the SUM90220E-GE3 is its very low on-state resistance, allowing it to be used in a variety of power-management applications. Its low gate-source voltage requirements enable it to be used in a variety of high-voltage environments, as well as in motor-control applications. It also has very low gate-source capacitance, making it suitable for noise reduction applications. Additionally, the device features very low switching losses and gate charge, making it ideal for use in a variety of power-management applications. The overall design of the device is robust and highly reliable, making it suitable for a variety of industrial applications.

In summary, the SUM90220E-GE3 is an ideal choice for a variety of power-management applications. It offers excellent levels of input impedance, outputs with low on-state resistance, and is capable of handling high currents and voltages. In addition, its low leakage current, high-speed switching capabilities, low switching losses, and low gate charge make it suitable for a variety of applications. Overall, the device is extremely robust and highly reliable, making it an ideal choice for industrial applications.

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