SUM90N08-6M2P-E3 Discrete Semiconductor Products

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The SUM90N08-6M2P-E3 is a surface-mounted N-Channel enhancement mode MOSFET (metal oxide semiconductor field effect transistor), developed and manufactured by Toshiba Semiconductor. It has a drain-source voltage rating of 60 volts, a maximum drain current rating of 66 amps, and a power dissipation rating of 15 watts when used in a maximum ambient temperature of 25ᵒC.

MOSFETs, also known as unipolar transistors or insulated-gate field-effect transistors, are active solid-state components that are found in a variety of electronic applications. MOSFETs may be used as either switches or amplifiers and are one of the most commonly used types of transistors. In its simplest form, a MOSFET consists of two or more terminals connected to a semiconductor material. When a voltage is applied to the gate, a “channel” forms allowing current to flow between the source and drain terminals.

In the case of the SUM90N08-6M2P-E3, this MOSFET has three terminals: the gate, the source, and the drain. It is designed to be used as an enhancement mode device, meaning that when voltage is applied to the gate, simply “turning on” the device and creating a conducting channel; no additional current is required to maintain this conducting state. The circuit arrangement of the device is such that when no voltage is applied at the gate, the device acts as a resistor, blocking any current flow. When voltage is applied, a conducting path is created from the source to the drain terminals, causing current to flow.

As with all semiconductor devices, the SUM90N08-6M2P-E3 has a number of specific material parameters and electrical characteristics. These include its capacitance, leakage current, on-resistance, and power rating, which are all important factors in its design and operation. The device is particularly well-suited for high-frequency switching circuits due to its wide bandwidth and low on-resistance.

Due to its high current and power ratings, the SUM90N08-6M2P-E3 is often used in applications such as power tools, consumer electronics, industrial automation, and automotive applications. In particular, it is often used in applications where a large amount of power needs to be switched, such as motor control and lighting. In these applications, the device is highly reliable and can handle a large amount of power without fear of failure.

The SUM90N08-6M2P-E3 is an excellent example of how modern semiconductor technology can be used to create highly efficient and reliable components for use in a wide range of applications. With its wide range of electrical and material properties, the device is able to handle a wide range of power levels while still providing excellent reliability. Combined with its wide bandwidth and low on-resistance, the device is an excellent choice for applications that require high-frequency switching.

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