SUM90N06-4M4P-E3 Discrete Semiconductor Products

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The SUM90N06-4M4P-E3 (also, SUM90N06-4M4P or SUM90N06) is a N-Channel Enhancement Mode MOSFET with an insulated gate that has a voltage rating of 400V, a drain-source maximum current of 30A and a maximum power dissipation of 186W. This type of transistor, also known as an Insulated Gate Bipolar Transistor (IGBT), is a voltage-controlled device that can be switched between an ON (or conducting) state and an OFF (or non-conducting) state by the application of a voltage signal. Although MOSFETs can be used for many different applications, the SUM90N06-4M4P is designed specifically for high-frequency switching and high-power applications such as motor control, wind turbines, solar inverters, and DC-DC converters.

The MOSFET transistors work by controlling the current through the channel, which is created and controlled by an insulated gate acting like a switch. In the SUM90N06-4M4P-E3, when a negative voltage is applied to the gate, it creates an electromagnetic field which repels the negatively charged electrons away from the gate which in turn creates an empty channel through which no current flows. On the other hand, when a positive voltage is applied to the gate, it attracts the electrons below the gate and initiates a current flow between the drain and source channel. In this way, it is able to control the current of the channel and can be used to switch ON or OFF any type of circuit depending on the voltage applied to the gate. The SUM90N06-4M4P has an on-resistance of 0.011 Ohm and a gate-source capacitance of 0.017 nF.

The gate of the SUM90N06-4M4P-E3 features an insulated coating that ensures that the signal applied to the gate does not leak through to other circuits. This is particularly useful in applications such as motor control, where signals must be accurately controlled without interference. The insulation also prevents leakage of current between the source and the gate or between the drain and the gate, enabling the transistor to be used in circuits with higher voltages without risk of damage. Furthermore, the insulated gate makes it suitable for use in high-power applications as it can handle larger currents with lower power dissipation.

In addition to the insulated gate, the unit features a maximum drain-source voltage of 400V and a maximum drain-source current of 30A, making it suitable for a variety of high-power applications. These high ratings also allow the unit to be used in applications such as motor control, power inverters, and DC-DC converters. The unit also features a maximum power dissipation of 186W and an on-resistance of 0.011 Ohm which ensures that it can operate efficiently when switching between ON and OFF states. Finally, the SUM90N06-4M4P-E3 has a gate-source capacitance of 0.017 nF which ensures low-noise operation making it ideal for use in applications requiring precise control.

Due to the high-voltage, high-current, and low-resistance levels offered by the SUM90N06-4M4P-E3, it is well suited for a variety of applications including motor control, wind turbines, solar inverters, high-speed switching, and DC-DC converters. It is specifically designed for use in high-power, high-frequency applications. The insulated gate makes it suitable for use in applications involving higher voltages, while the maximum power dissipation and low on-resistance value makes it ideal for use in high-current applications. Finally, the low-noise performance provided by the gate-source capacitance makes it ideal for precision control applications.

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