SUM90142E-GE3 Discrete Semiconductor Products

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The SUM90142E-GE3 is a single Gate Enhanced Mosfet which is a powerful transistors that can be used in a range of applications. The device is a single gate, Enhancement-mode Mosfet with low on-state resistance, allowing for increased current and voltage levels. The device is well-suited to applications requiring high-current switching capabilities from displays and processors, offering a wide range of possible applications. It is available in both TO-220F (Full-Molded) and D2PAK (Full-Molded) packages, making it suitable for a range of applications.

The SUM90142E-GE3 has an off-state drain-to-source voltage rating of up to 50V and an on-state pressure drop of 2.0V typical. It features a typical drain-to-source current (I DS ) of 28A and can handle peak transient currents up to 110A providing reliable, high quality performance. The device is optimised for use in a wide range of applications including, LED lighting or displays, gate drivers, multimedia systems, routers, processor power supplies and memory, radio frequency and analog power applications.

In terms of its working principle, the device consists of a single gate which acts as an electrically insulated barrier between the n-type and p-type semiconductor layers present in the structure of the switch. When the gate voltage required for turn-on is applied to the device, electrons from the n-type layer enter the p-type layer, forming a conducting channel between the source and drain. This channel, when established, provides the electric current flow between the source and drain, indicating that the device is on.

When the voltage applied to the gate is increased, the electric field generated can become large enough to cause a decrease in the current flowing through the device. This phenomenon is known as \'body effect\', as the channel between the source and drain is effectively reduced by the increase in the electric field. Once the gate voltage is lowered below turn-on voltage, the electric field will become insufficient to create a conducting channel and the device will turn off. This process ensures that the device can be charged, discharged and operated in any load condition.

To summarise, The SUM90142E-GE3 is a single Gate Enhanced Mosfet that can be used for a number of applications requiring high-current switching capabilities. It provides reliable performance due to its low on-state resistance, and is available in both TO-220F (Full-Molded) and D2PAK (Full-Molded) packages. The device operates using a single gate which acts as an electrically insulated barrier between the n-type and p-type layers, and has an off-state drain-to-source voltage rating of up to 50V, an on-state pressure drop of 2.0V typical, a typical drain-to-source current (I DS ) of 28A and can handle peak transient currents up to 110A.

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