SUM90N08-4M8P-E3 Discrete Semiconductor Products

Vgs(th) (Max) @ Id:	4V @ 250µA
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package:	TO-263 (D2Pak)
Mounting Type:	Surface Mount
Operating Temperature:	-55°C ~ 175°C (TJ)
Power Dissipation (Max):	3.75W (Ta), 300W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	6460pF @ 40V
Vgs (Max):	±20V
Gate Charge (Qg) (Max) @ Vgs:	160nC @ 10V
Series:	TrenchFET®
Rds On (Max) @ Id, Vgs:	4.8 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On):	8V, 10V
Current - Continuous Drain (Id) @ 25°C:	90A (Tc)
Drain to Source Voltage (Vdss):	75V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Obsolete
Packaging:	Cut Tape (CT)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

.SUM90N08-4M8P-E3 is a type of single enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). As a type of MOSFET, it falls into the class of transistors known as "Field-Effect Transistors", or FETs. This FET is a single type device, meaning it consists of a single source, gate, and drain.This FET is typically used in the application field of switch mode power supply and electronic motor driving, as well as reverse battery protection, and device protection and control in motor drivers. It is also used in many other applications where its low on-state resistance and low threshold voltage are needed.In order to understand the working principle of this device, it is important to understand the physics behind Field-Effect Transistors. Unlike other types of transistors, such as bipolar transistors, FETs are voltage controlled transistors. This means that the drain-source voltage is determined by the gate voltage instead of the current. The basic operating principle of this device can be understood as follows: when a voltage is applied to the gate of the FET, it creates an electric field between the source and drain terminals. This electric field then modifies the conductivity and resistance of the channel, thus allowing current to flow between the source and drain terminals. The higher the gate voltage, the lower the resistance of the channel and the larger the current flow. The resistance and current flow can also be modified by altering the gate-source voltage or the drain-source voltage. As the drain-source voltage increases, so does the resistance of the channel, resulting in a decrease in the current flow. The SUM90N08-4M8P-E3 is particularly useful for its low on-state resistance and low threshold voltage. The low threshold voltage means that it requires less voltage to turn on (or off) than other types of FETs and transistors, while the low on-state resistance results in less power loss during operation. In conclusion, the SUM90N08-4M8P-E3 is a type of single enhancement mode MOSFET, usually used in the applications of switch mode power supply, electronic motor driving, reverse battery protection, and device protection and control. Its working principle is based on the physics of Field-Effect Transistors, where the gate voltage determines the drain-source voltage and thus the resistance and current flow of the channel. Its low on-state resistance and low threshold voltage make it particularly useful for many applications.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description