ZVN2106ASTOA Allicdata Electronics
Allicdata Part #:

ZVN2106ASTOA-ND

Manufacturer Part#:

ZVN2106ASTOA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.45A TO92-3
More Detail: N-Channel 60V 450mA (Ta) 700mW (Ta) Through Hole E...
DataSheet: ZVN2106ASTOA datasheetZVN2106ASTOA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3
Description

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The ZVN2106AST OA is an advanced monolithic N-Channel enhancement mode field effect transistor. This device provides high performance, reliability and low voltage to allow GaN designers to increase their switching performance. The ZVN2106AST is designed to meet the needs of a variety of applications.

The ZVN2106AST has excellent integration and a simple switching behavior. Its high gate threshold voltage allows for robust operation and consistent threshold variance. The ZVN2106AST\'s low on-resistance and low turn-on voltage ensure a fast and efficient switching performance.

The ZVN2106AST is a versatile, high-speed field effect transistor (FET) that can be used in a variety of applications, such as power switching, power distribution, data transmission, signal conditioning, and RF signal amplification. It can be used as an on/off switch, a voltage-controlled switch, and more. Due to its low on-resistance and high switching speed, ZVN2106AST can be used to drive high-current applications up to 18 A.

The operation of the ZVN2106AST is based on its operation as a MOSFET. A MOSFET is a field effect transistor (FET) with a thin oxide layer between its gate and the conductive channel. The oxide layer acts as a dielectric, which reduces the capacitance between the gate and the channel and allows for the high switching speeds. MOSFETs are used in many electronic designs due to their low on-resistance and high switching speeds. The ZVN2106AST utilizes a MOSFET structure to provide high-speed operation and low on-resistance.

The ZVN2106AST is designed to have an enhanced avalanche capability, which ensures high robustness in operation. The ZVN2106AST features an integrated gate-source diode to protect the gate terminal from overvoltage events. Additionally, the chip is tested with a voltage clamp on the drain to protect the device from large electrical overstress events. The combination of the integrated gate-source diode and the voltage clamp ensures a reliable operation in all conditions.

The ZVN2106AST is a versatile device that can be used to create many different circuits and systems. It can be used to control power to a device, amplify and modulate signals, and more. It can be integrated into multiple systems for different types of applications. The device can be used in power conversion, motors, automotive applications, power inverters, computer systems, and many others.

The ZVN2106AST is a high-performance device that provides excellent switching performance and reliability. Its simple switching behavior and high gate threshold voltage allows for robust operation and consistent performance in various applications. With its low on-resistance, the ZVN2106AST is an ideal choice for applications requiring high-speed operation. The ZVN2106AST is a device that provides reliable performance in a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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