Allicdata Part #: | ZVN2110GTC-ND |
Manufacturer Part#: |
ZVN2110GTC |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 500MA SOT223 |
More Detail: | N-Channel 100V 500mA (Ta) 2W (Ta) Surface Mount SO... |
DataSheet: | ZVN2110GTC Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 500mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 2W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The ZVN2110GTC is a high-voltage, single-gate MOSFET transistor. It is designed to provide low-distortion, high-efficiency power amplification in audio, video, and other high-frequency applications. This MOSFET is a voltage variable device, which can be used to provide high speed, low-noise, low-side operation in a single device.
The ZVN2110GTC can be used in a variety of fields, including audio, radio, telecommunications, and industrial electronics. It has been proven to be an excellent choice for power amplifier design, high-voltage power supply design, and RF circuit design. It is also well-suited for use in power control applications, such as motor control, microprocessor-controlled power supplies, and electronic audio control systems.
The ZVN2110GTC features a high input impedance, low ON resistance, and low input capacitance. This makes it ideal for high-frequency applications, as well as high-performance PLLs and clock generator circuits. It also has a low gate threshold voltage, allowing for better control of the output voltage.
The ZVN2110GTC works on the principle of the transfer-current effect. This is a phenomena in which the current between the source and the gate terminals of a MOSFET increases with the applied gate-source voltage. This causes the drain current to increase in a linear fashion with the gate-source voltage, as well as a corresponding increase in drain voltage.
The ZVN2110GTC can be used in a variety of applications, thanks to its excellent low-noise, high-efficiency performance. Its low input capacitance and high input impedance, combined with its low gate threshold voltage, make it ideal for use in audio signal amplification and control, as well as for use in high-speed clocking applications. Its low ON resistance and high input capacitance also make it a great choice for RF signal amplification, PLLs, and clock driver circuits.
The ZVN2110GTC is an excellent choice for any high-frequency, high-performance applications where low distortion and high efficiency power amplification is desired. It is well suited for use in audio, radio, and telecommunications equipment. It is also a great choice for power supply design and power control applications, such as motor control and high-speed clocking applications.
The specific data is subject to PDF, and the above content is for reference
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