ZVN2120GTA Discrete Semiconductor Products

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The ZVN2120GTA is a small-signal, depletion-mode MOSFET from Vishay\'s Zetex ZVN2111A to ZVN2124A family. It is a high-voltage type intended for amplifier and other circuits requiring an extremely high input impedance. This extended voltage range MOSFET family is designed to provide superior uncompensated linearity and is versatile in applications where low gate and drain-source resistance makes it suitable for low voltage systems.

The ZVN2120GTA is designed for amplifier circuits demanding extreme high input impedance and low on-state resistance. It is optimized for use in applications where a large number of small-signal inputs share a common output. Its low single-end linearity makes it suitable for multiplexer, power control, linear and switching amplifier applications. Its low drain-source resistance makes it suitable for low voltage systems.

The ZVN2120GTA is a low voltage, medium power depletion MOSFET. With a maximum drain-source voltage of 200 V and a peak on-state current of 5 A, the MOSFET has an extended drain-source breakdown voltage rating of up to 200 V. It is designed for use in microwave electronics where current levels and thermal instability can be a problem. The MOSFET has a low on-state resistance and is designed to ensure low gate charge. This helps to reduce power consumption from the application and optimize frequency response.

The ZVN2120GTA working principle is based on the principle of field-effect transistor (FET) devices. The FET is a type of transistor that operates on the principle of electrically-induced changes in the electrical properties of a semiconductor material. It consists of a source, a drain and a gate, which are placed between two layers of doped silicon. It has a low input impedance and a large transconductance that controls the current flow between the source and the drain. The transfer characteristics of a FET device depend on the bias conditions at the gate, which can be controlled by applying a specific voltage or current. It can be used as an amplifier, switch or as a diode.

The ZVN2120GTA also features a gate turn-on protection feature, which reduces the possibility of gate-induced drain leakage. Its low gate charge helps reduce power consumption and improve thermal behavior. Its maximum drain-source voltage rating of 200 V helps it to handle larger peak-to-peak voltage swings, making it suitable for transformerless audio circuits. The ZVN2120GTA also offers excellent high frequency performance with its low gate-drain capacitance, which makes it ideal for high speed digital circuits.

The ZVN2120GTA is most commonly used in application fields such as audio systems, low voltage power supplies, power controllers and switches, AC/DC converters, high speed digital circuits, and many other applications where a low voltage, high performance MOSFET is required.

In summary, the ZVN2120GTA is a low voltage, high performance depletion MOSFET with an extended voltage rating and low gate charge. It is suitable for applications demanding high input impedance, low on-state resistance, and excellent linearity. Its excellent features such as its increased drain-source voltage rating, low gate-drain capacitance, and gate turn-on protection make it suitable for many different applications. The ZVN2120GTA is most commonly used in audio systems, low voltage power supplies, power controllers and switches, AC/DC converters, and high speed digital circuits.

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