ZVN2106GTA Discrete Semiconductor Products |
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Allicdata Part #: | ZVN2106GTR-ND |
Manufacturer Part#: |
ZVN2106GTA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 710MA SOT223 |
More Detail: | N-Channel 60V 710mA (Ta) 2W (Ta) Surface Mount SOT... |
DataSheet: | ZVN2106GTA Datasheet/PDF |
Quantity: | 4000 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 2W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 18V |
Vgs (Max): | ±20V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 710mA (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The ZVN2106GTA is a single N-channel enhancement-mode MOSFET (Metal–Oxide–Semiconductor Field-Effect Transistor). It is a three terminal device used to amplify electrical signals or to switch electrical power. Its main features are its low on-resistance, elevated DC breakdown voltage and fast switching speed which make the ZVN2106GTA suitable for a wide range of applications.
The ZVN2106GTA has an on-resistance of around 0.7 ohms (RDS(on)) and a maximum drain-source breakdown voltage of 30V. It also has a low gate-source threshold voltage of around 2 V and a gate-source capacitance of about 60 pF. These features are beneficial for applications that require high current conduction and switching at a low voltage.
The ZVN2106GTA is typically used in switching power supplies, motor drives, battery management systems, load switches, and voltage regulators. It can be employed in digital circuits to drive high current loads with low on-resistance and relatively low gate drive voltage. It can also be used in amplifier circuits where it is driven by a low voltage signal, and then it outputs a high current signal.
The working principle of the ZVN2106GTA is based on the MOSFET, which is a voltage-controlled device. When a voltage is applied across the gate-source terminals, the device is turned on, allowing current to flow between the drain and source terminals. The current flow is controlled by the amount of voltage applied to the gate. By varying the gate voltage, the device can be used to control the current flow between the drain and source.
The ZVN2106GTA is a voltage-controlled device, so it is important to select the correct gate voltage and current. Too low a voltage will result in insufficient current flow and too high a voltage will cause the device to go into saturation, resulting in high power dissipation, short circuit current, and over-heating.
In summary, the ZVN2106GTA is a single N-channel enhancement-mode MOSFET with low on-resistance, elevated DC breakdown voltage and fast switching speeds. It is used for a variety of applications, including switching power supplies, motor drives, battery management systems, load switches, and voltage regulators. In order to maximize the performance of the device, it is important to select the correct gate voltage and current.
The specific data is subject to PDF, and the above content is for reference
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