ZVN2110ASTOA

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZVN2110ASTOA is a N-Channel Enhancement Mode Field Effect Transistor, developed by Diodes Inc. It is designed to drive highly inductive loads, and can be used up to 45V.

This device is specifically engineered to decrease switching losses and increase efficiency as opposed to other transistors on the market, while providing a low channel on resistance.

The ZVN2110ASTOA\'s most common uses are in solid state relays, motor control, audio amplifiers, and other power applications.

ZVN2110ASTOA Applications

• Solid State Relays
• Motor Control
• Audio Amplifiers
• Power Management

ZVN2110ASTOA Working Principle

A N-channel MOSFET works by passing electric current through an N-channel. When a positive voltage is applied to the gate terminal, it creates an electric field which attracts positive charge carriers (holes) and forms a conductive channel between the drain and source. This is known as “enhancement mode”. When the gate voltage is removed, the induced electric field vanishes and the conductive channel closes. Thus, the MOSFET acts as an open-closed switch with the gate terminal controlling the on/off function.

The ZVN2110ASTOA is built with an N-channel that enables an extremely low on resistance while also reducing losses through improved thermal management.

The ZVN2110ASTOA also has a fast switching time, allowing faster response to changing input signals and better power efficiency. This device is also equipped with an Under Voltage Lockout Function which prevents damaging voltage spikes.

The specific data is subject to PDF, and the above content is for reference