Allicdata Part #: | ZVN2110ASTOB-ND |
Manufacturer Part#: |
ZVN2110ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 100V 320MA TO92-3 |
More Detail: | N-Channel 100V 320mA (Ta) 700mW (Ta) Through Hole ... |
DataSheet: | ZVN2110ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 320mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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ZVN2110ASTOB Application Field and Working Principle
The ZVN2110ASTOB is a very successful field effect transistor (FET) with a variety of applications. This single N-Channel MOSFET is capable of high current and voltage tolerances, making it an ideal choice for applications requiring superior protection from surges. Furthermore, its very low input capacitance and on-state resistance makes it well-suited for low frequency switching applications. In addition, its extremely wide breakdown voltage rating makes it an ideal choice for applications such as motor control, inverter or dc-to-dc converters.
The ZVN2110ASTOB utilizes a two-terminal structure composed of source and drain, where the source is the negative terminal and the drain is the positive terminal. This structure is common to most FETs and MOSFETs. When the gate voltage is less than the threshold voltage, the ZVN2110ASTOB is off and no current flows. When the gate voltage is raised above the threshold voltage, current begins to flow from the source to the drain in a process called “inversion-charge”, resulting in an increase in conductivity between the two terminals. The increase in conductivity continues until the voltage is saturated and a stable current is established. The ZVN2110ASTOB has an off-state current leakage rating of 50µA, making it suitable for low-power applications.
The ZVN2110ASTOB has a very low input capacitance and a wide range of bandgaps, making it well-suited for high frequency applications. Furthermore, the device has a well-defined threshold voltage for suppressing false trigger, making it ideal for applications requiring rigorous signal filtering. Additionally, the device exhibits superior RF immunity due to its low junction capacitance, making it a great choice for wireless applications. Furthermore, its low on-state resistance ensures a low power loss and high efficiency in applications requiring large current.
In summary, the ZVN2110ASTOB is a great choice for applications requiring superior surge protection, low input capacitance, robust RF immunity, and accurate signal filtering. Its wide range of bandgaps and extremely high voltage tolerance makes it suitable for motor control, inverter or dc-to-dc converters. Additionally, its low on-state resistance and low junction capacitance makes it a great choice for wireless applications. Thus, the ZVN2110ASTOB is a reliable, cost-effective and extremely competent FET.
The specific data is subject to PDF, and the above content is for reference
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