Allicdata Part #: | ZVN2106ASTOB-ND |
Manufacturer Part#: |
ZVN2106ASTOB |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 60V 0.45A TO92-3 |
More Detail: | N-Channel 60V 450mA (Ta) 700mW (Ta) Through Hole E... |
DataSheet: | ZVN2106ASTOB Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 450mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2 Ohm @ 1A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 75pF @ 18V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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ZVN2106A is a high voltage N-channel MOSFET (Metal oxide semiconductor field effect transistor) that can be used in many circuit applications. The ZVN2106A is designed to operate with very high power ratings, making it a suitable choice for applications with high power levels, such as high voltage switching circuits, high voltage power supplies and motor control.
The ZVN2106A has a rated drain source voltage of up to 500V, a maximum continuous drain current of 25A and a maximum gate threshold voltage of 4.5V. It is also equipped with a unique gate-protecting suspension feature, which gives the MOSFET superior ESD protection.
The working principle of MOSFET is based on the principle of modulation of the current flow. MOSFETs contain three terminals, the source, gate and drain. The gate terminal is the control terminal that modulates the current flow between the other two terminals, the source and the drain.
The operation of the MOSFET is dependent on the polarity of the applied voltage. For example, if a positive voltage is applied to the gate terminal, it creates a region of electron depletion near the gate. This depletion region inhibits most of the current flow between the source and the drain, reducing the current flow. On the other hand, if a negative voltage is applied to the gate terminal, it creates a region of electron accumulation near the gate. This accumulation region increases the current flow between the source and the drain, increasing the current.
In addition to its gate-protecting suspension feature, the ZVN2106A also has great thermal properties. It has a high drain source breakdown voltage of 500V and a maximum junction temperature of 175°C. Its thermal resistance from junction to case is low making it suitable for high power applications.
The ZVN2106A is widely used in applications such as power supplies, high voltage switching circuits and motor control. Its high power ratings make it suitable for applications with high power levels. Because of its thermal robustness, it can also be used in applications requiring low thermal temperatures. The ability to switch high voltages quickly and accurately makes it ideal for motor control applications.
The ZVN2106A is a versatile device suitable for a wide range of high power applications. Its high voltage capability, combined with its gate-protecting suspension feature, makes it an ideal choice for high voltage switching circuits, high voltage power supplies and motor control.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
ZVN2106ASTOA | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.45A TO9... |
ZVN2106ASTOB | Diodes Incor... | 0.0 $ | 1000 | MOSFET N-CH 60V 0.45A TO9... |
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