ZVN2106ASTOB Allicdata Electronics
Allicdata Part #:

ZVN2106ASTOB-ND

Manufacturer Part#:

ZVN2106ASTOB

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 60V 0.45A TO92-3
More Detail: N-Channel 60V 450mA (Ta) 700mW (Ta) Through Hole E...
DataSheet: ZVN2106ASTOB datasheetZVN2106ASTOB Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 2 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 18V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: E-Line (TO-92 compatible)
Package / Case: E-Line-3
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

ZVN2106A is a high voltage N-channel MOSFET (Metal oxide semiconductor field effect transistor) that can be used in many circuit applications. The ZVN2106A is designed to operate with very high power ratings, making it a suitable choice for applications with high power levels, such as high voltage switching circuits, high voltage power supplies and motor control.

The ZVN2106A has a rated drain source voltage of up to 500V, a maximum continuous drain current of 25A and a maximum gate threshold voltage of 4.5V. It is also equipped with a unique gate-protecting suspension feature, which gives the MOSFET superior ESD protection.

The working principle of MOSFET is based on the principle of modulation of the current flow. MOSFETs contain three terminals, the source, gate and drain. The gate terminal is the control terminal that modulates the current flow between the other two terminals, the source and the drain.

The operation of the MOSFET is dependent on the polarity of the applied voltage. For example, if a positive voltage is applied to the gate terminal, it creates a region of electron depletion near the gate. This depletion region inhibits most of the current flow between the source and the drain, reducing the current flow. On the other hand, if a negative voltage is applied to the gate terminal, it creates a region of electron accumulation near the gate. This accumulation region increases the current flow between the source and the drain, increasing the current.

In addition to its gate-protecting suspension feature, the ZVN2106A also has great thermal properties. It has a high drain source breakdown voltage of 500V and a maximum junction temperature of 175°C. Its thermal resistance from junction to case is low making it suitable for high power applications.

The ZVN2106A is widely used in applications such as power supplies, high voltage switching circuits and motor control. Its high power ratings make it suitable for applications with high power levels. Because of its thermal robustness, it can also be used in applications requiring low thermal temperatures. The ability to switch high voltages quickly and accurately makes it ideal for motor control applications.

The ZVN2106A is a versatile device suitable for a wide range of high power applications. Its high voltage capability, combined with its gate-protecting suspension feature, makes it an ideal choice for high voltage switching circuits, high voltage power supplies and motor control.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "ZVN2" Included word is 21
Part Number Manufacturer Price Quantity Description
ZVN2106ASTOA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 0.45A TO9...
ZVN2106ASTOB Diodes Incor... 0.0 $ 1000 MOSFET N-CH 60V 0.45A TO9...
ZVN2106GTC Diodes Incor... -- 1000 MOSFET N-CH 60V 0.71A SOT...
ZVN2110ASTOA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 100V 320MA TO...
ZVN2110ASTOB Diodes Incor... 0.0 $ 1000 MOSFET N-CH 100V 320MA TO...
ZVN2110GTC Diodes Incor... -- 1000 MOSFET N-CH 100V 500MA SO...
ZVN2120A Diodes Incor... -- 1000 MOSFET N-CH 200V 0.18A TO...
ZVN2120ASTOA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 200V 0.18A TO...
ZVN2120ASTOB Diodes Incor... 0.0 $ 1000 MOSFET N-CH 200V 0.18A TO...
ZVN2120ASTZ Diodes Incor... 0.0 $ 1000 MOSFET N-CH 200V 0.18A TO...
ZVN2120GTC Diodes Incor... -- 1000 MOSFET N-CH 200V 0.32A SO...
ZVN2535ASTOA Diodes Incor... 0.0 $ 1000 MOSFET N-CH 350V 0.09A TO...
ZVN2535ASTOB Diodes Incor... 0.0 $ 1000 MOSFET N-CH 350V 0.09A TO...
ZVN2535ASTZ Diodes Incor... 0.0 $ 1000 MOSFET N-CH 350V 0.09A TO...
ZVN2106GTA Diodes Incor... -- 4000 MOSFET N-CH 60V 710MA SOT...
ZVN2110ASTZ Diodes Incor... -- 1000 MOSFET N-CH 100V 320MA TO...
ZVN2110GTA Diodes Incor... -- 1000 MOSFET N-CH 100V 500MA SO...
ZVN2106ASTZ Diodes Incor... -- 1000 MOSFET N-CH 60V 0.45A TO9...
ZVN2120GTA Diodes Incor... -- 1000 MOSFET N-CH 200V 320MA SO...
ZVN2106A Diodes Incor... -- 3237 MOSFET N-CH 60V 450MA TO9...
ZVN2110A Diodes Incor... -- 5757 MOSFET N-CH 100V 320MA TO...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics