Allicdata Part #: | ZVN2120ASTOA-ND |
Manufacturer Part#: |
ZVN2120ASTOA |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET N-CH 200V 0.18A TO92-3 |
More Detail: | N-Channel 200V 180mA (Ta) 700mW (Ta) Through Hole ... |
DataSheet: | ZVN2120ASTOA Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 200V |
Current - Continuous Drain (Id) @ 25°C: | 180mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 10 Ohm @ 250mA, 10V |
Vgs(th) (Max) @ Id: | 3V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 85pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 700mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | E-Line (TO-92 compatible) |
Package / Case: | E-Line-3 |
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The ZVN2120ASTONA is a Field Effect Transistor (FET) that is designed and manufactured by Diodes Incorporatedusing their advanced processing capabilities and high level of quality assurance and control. This device is a N-channel enhancement mode MOSFET and is available in a SOT23 Package. This transistor is well-suited for many applications including power switching. It is also optimized to work in both DC circuits and pulse applications. The ZVN2120ASTONA has a maximum breakdown voltage of -24V, a maximum gate-source voltage of -20V and a maximum drain current of -500mA.
The working principle of the ZVN2120ASTONA is relatively simple. When there is a voltage applied to the gate of the device, an electric field is generated which modulates the dimensions of the channel between the source and the drain, which changes its resistance. This process is known as voltage control. When the electric field is applied, the source and drain channels become modulated and results in an increase in the current. The current can be controlled by the voltage applied to the gate. If the voltage applied is more than the specified break down voltage, the electric field generated can cause the transistor to be destroyed.
The ZVN2120ASTONA can be used in a wide variety of applications. It can be used to switch between various electrical components in a DC circuit such as a switch, a relay, or a motor. They can also be used in AC circuits to provide high speed switching operations or to provide protection against high currents. Additionally, they can be used to amplify or modulate signals for audio, video and transmission applications.In addition, this transistor is using for power switching applications. This is because of its high maximum drain current rating and its low on-resistance. It is also used in a wide range of other applications such as load regulation, motor control and linear regulation.
In summary, the ZVN2120ASTONA is a N-channel enhancement mode MOSFETthat is designed and manufactured by Diodes Incorporated for applications where high speed switching is needed. It is optimized to work in both DC and pulse applications and also has a high maximum drain current rating and low on-resistance. This transistor can be used in a wide variety of applications such as power switching, load regulation, motor control, linear regulation and audio, video and transmission applications.
The specific data is subject to PDF, and the above content is for reference
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