ZVN2120A Allicdata Electronics
Allicdata Part #:

ZVN2120A-ND

Manufacturer Part#:

ZVN2120A

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET N-CH 200V 0.18A TO92-3
More Detail: N-Channel 200V 180mA (Ta) 700mW (Ta) Through Hole ...
DataSheet: ZVN2120A datasheetZVN2120A Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 180mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 10 Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id: 3V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 85pF @ 25V
FET Feature: --
Power Dissipation (Max): 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description

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The ZVN2120A is a P-channel, low-power, low-voltage enhanced-mode, Field-Effect transistor (FET). It is manufactured by Diodes Incorporated, which is a leading manufacturer of semiconductor components. The ZVN2120A is part of the ZVN2100 family of products, which are designed for use in a wide range of applications, such as sensor signal processing, signal switching, and analog circuit applications.

The ZVN2120A is designed with a gate-source voltage of 10 volts maximum and a drain-source breakdown voltage of 20 volts. The power dissipation of the device is up to 1.5 watts under the maximum conditions. The ZVN2120A is rated with a nominal rDS (ON) at a drain-source voltage of 5 volts and a gate voltage of 8 volts. The maximum drain current is -1A.

The ZVN2120A is a four-terminal device consisting of a drain (D), source (S), gate (G) and, body (B). The body terminal is typically connected to the negative potential. The gate terminal is the reference point for the operating voltage of the device and is insulated from the drain and source terminal with a thin layer of insulation material. The gate can be connected to the control voltage either directly or through some control circuitry.

The ZVN2120A is an enhancement-mode MOSFET, which means that the current flows between the source and drain only when a positive voltage is applied to the gate. The ZVN2120A is also an “linear” transistor, as opposed to a “switching” transistor, which means that the current passes through the device in a linear fashion, according to the following relationship:

IDS = K(VGS - Vth)2Where K is the device transconductance and Vth is the gate threshold voltage.

The ZVN2120A is a low-voltage device, which is ideal for applications where power dissipation, transient sensitivity, and/or space are concerns. This device can be used in a variety of applications including motor control, switch-mode power supplies, power sensing circuits, audio amplifiers, and other consumer and industrial applications.

The ZVN2120A is a great choice for applications where low-voltage operation and low-power dissipation are required. Its low threshold voltage allows for low power operation, which is ideal for applications that require low voltage and low power. Its small physical size allows for easy placement and does not require additional components.

The ZVN2120A is a great choice for applications where simplicity of design and functionality are important. Its low power operation and low threshold voltage makes it easy to design and implement in a variety of applications. The device’s linear characteristics make it ideal for low voltage and low power applications, as well as applications that require reliable and stable performance. Additionally, the extremely small size of the ZVN2120A makes it ideal for applications where space is a concern.

The specific data is subject to PDF, and the above content is for reference

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