ZVN2110ASTZ Discrete Semiconductor Products

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The ZVN2110ASTZ is a single N-channel Enhancement-Mode MOSFET which offers a combination of wide dynamic range and high output current capability. It is well suited for use in a variety of applications, including audio amplifiers and switch mode power supplies. This FET also provides excellent stability and superior heat management due to its low gate-drain capacitance and high current packing density.

MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) are voltage controlled electronically switchable devices which offer higher forward blocking voltage capability, faster switching speeds, and higher input and output power than traditional bipolars or junction field effect transistors (JFET). When the gate-source voltage is increased beyond the threshold voltage of the MOSFET, electrons are pushed from the substrate region into the floating bulk, creating an inversion layer in the portion of the substrate under the gate. The gate is then able to attract electrons from the underlying inversion layer by lowering the energy barrier between the gate and the inversion layer.

The ZVN2110ASTZ is an N-channel enhancement-mode MOSFET that utilizes a source-drain structure which makes it suitable for use in a number of applications such as audio amplification, switch mode power supplies and high frequency switching. The ZVN2110ASTZ can switch up to 2A on and off, and can handle up to 30V drain-source voltage and 18V source-drain voltage. The low on-resistance of only 950mohm makes it ideal for applications like motor control and solenoid switching.

The ZVN2110ASTZ can be used to build high efficiency pulse-width-modulated current sensing, DC-DC switching and switch mode power supplies. This FET can also be used as an electronic switch for voltage level shifting and for controlling DC light dimmers. It can also be used in RF power amplifiers for power exceeding 500mW, and in automotive applications such as in vehicle lighting control, solenoid control and motor control applications.

The ZVN2110ASTZ also supports higher frequencies, making it suitable for high frequency switching applications. This FET is one of the best choices for driving loads at high frequencies as it has low RDS(ON). This low RDS(ON) allows a pulse width modulation of up to o 2MHz, which results in higher efficiency and improved power consumption.

In addition, the ZVN2110ASTZ has a low thermal resistance and low drain-source capacitance, which make it suitable for high power applications. This FET is also well suited for use in high-speed signal control and switching applications which require high-speed switching without any distortion of the signal.

Overall, the ZVN2110ASTZ is a great choice for a wide array of applications. Its low thermal resistance, low RDS(ON) and low gate-drain capacitance makes it ideal for high power and high frequency switching applications. Its high output current capability and voltage range make it suitable for use in audio amplifiers and DC light dimmers. It is also well suited for motor control, signal control and power supply applications. With its excellent stability, superb heat management and wide dynamic range, the ZVN2110ASTZ is sure to make a great addition to any system.

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