Allicdata Part #: | ZXMP7A17KQTCDI-ND |
Manufacturer Part#: |
ZXMP7A17KQTC |
Price: | $ 0.29 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 70V 3.8A DPAK |
More Detail: | P-Channel 70V 3.8A (Ta) 2.11W (Ta) Surface Mount T... |
DataSheet: | ZXMP7A17KQTC Datasheet/PDF |
Quantity: | 1000 |
2500 +: | $ 0.26778 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 70V |
Current - Continuous Drain (Id) @ 25°C: | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 160 mOhm @ 2.1A, 10V |
Vgs(th) (Max) @ Id: | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 635pF @ 40V |
FET Feature: | -- |
Power Dissipation (Max): | 2.11W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252 |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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The ZXMP7A17KQTC is a single N-channel field effect transistor. It is designed to handle higher power levels and is suitable for many applications such as high-frequency switching of power MOSFETs. This device uses a low gate to source voltage and high performance to provide improved reliability and lifetime.
The ZXMP7A17KQTC is manufactured using a highly advanced process by GCT – the leading manufacturer of high-performance semiconductor power devices.
The ZXMP7A17KQTC has a maximum drain source voltage of 100V, a maximum gate to source voltage of 8V, and a maximum drain current of 20A. Its on-resistance is low compared to other FETs and is suitable for switching and linear applications.
The ZXMP7A17KQTC is a surface-mount device and is available in three different packages - the MSOP8, MSOP-8E and the HSOP-8. It can be used in high-power applications such as motor control applications, DC-DC converters, and high-current switching devices.
The ZXMP7A17KQTC is also suitable for analog signal buffering, signal conditioning, and power supply control.
The ZXMP7A17KQTC has a low gate charge, low gate and drain capacitance, and low on-resistance which makes it ideal for high-speed switching applications. It also has fast switching speed and a low gate to source capacitance which ensures low switching losses and improved performance.
The working principle of the ZXMP7A17KQTC is based on the depletion mode (or non-depletion mode) field effect transistor. In a standard N-channel MOSFET, a positive input voltage is applied to the gate, which attracts electrons from the source region and forms an inversion layer in the channel region. The resultant electric field between the gate and the source increases the strength of the channel and in turn, increases the drain current.
In the ZXMP7A17KQTC, the depletion mode FET uses the same basic principle but the way the gate and drain current interact is different. In this case, the gate voltage is lowered to the threshold voltage (Vth) of the device, allowing the electrons to flow from the source to drain without an applied gate voltage. This has the effect of reducing the switching losses and lowering the gate capacitance, thus improving the overall performance. In addition, the depletion mode FET has a better channel resistance, as it is not influenced by the applied gate voltage.
The ZXMP7A17KQTC is a reliable and high performance MOSFET that is suitable for many system applications. It has a low on-resistance, low gate to source capacitance and fast switching speed, making it suitable for high-power applications such as in motor control systems, converters, and switching devices. Its low gate charge, low on-resistance, and low gate to source capacitance make it ideal for high-speed, low switching loss applications.
The specific data is subject to PDF, and the above content is for reference
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