ZXMP3A16GTA Discrete Semiconductor Products

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A ZXMP3A16GTA is a power FET (Field-Effect Transistor) with an optimized structure. It is a high voltage, low current type of power transistor that is particularly useful for applications like power conversion, switch mode power supplies (SMPS), motor control and high-power amplifiers.

The ZXMP3A16GTA is composed of three main terminal pins that serve as the source, gate and drain. It is based on the MOS technology and its main characteristics include a high voltage breakdown of 1650V, a low on-state resistance of 2.08 mOhm, a low gate charge of 2.4 nC and its rugged over-current ability.

The main application field of the ZXMP3A16GTA is in automotive circuits and other applications that require high voltage strength like inverters, battery chargers, power supplies and DC converters. In automotive environments, it is used for high current switching and can be used to control circuits in all kinds of vehicle, such as cars, buses, boats and more.

The working principle of the ZXMP3A16GTA is fairly simple. The gate terminal is connected to a control circuit, through which a gate voltage can be applied. Depending on the applied voltage, current can pass through the FET, allowing high current to flow between the source and drain. This high current can be used to control other devices and components connected to the circuit.

When no voltage is applied to the gate terminal, the FET is in the off state, which prevents any current from flowing through it. However, when a specific voltage is applied to the gate terminal, the FET becomes conductive and switches on. By controlling the voltage applied at the gate terminal, the conduction state of the FET can be controlled, allowing it to be used as a powerful switching device.

In summary, the ZXMP3A16GTA is a high-voltage power FET that is useful for automotive, inverter and power applications. It works by allowing high current to flow between the source and drain when a specific voltage is applied to its gate terminal. By controlling the voltage applied to the gate terminal, the conduction state of the FET can be controlled and used as a powerful switching device.

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