ZXMP7A17GTA Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The ZXMP7A17GTA is a semiconductor device from Panasonic Corporation. It is categorized as a Transistor Field Effect Transistor (FET), more specifically a single oxidation-oxide Metal Oxide Semiconductor Field Effect Transistor (MOSFET). MOSFETs are used to amplify and switch electronic signals, and determine the number of electrical pulses, which give power to electrical devices. MOSFETs are popular because they are relatively inexpensive and can be used for high-frequency applications.

The ZXMP7A17GTA has a drain-source voltage of 17V, with an on-state drain current of 10.5A, making this an ideal power MOSFET to use for switching or linear applications. This can be used in any low voltage applications such as low voltage lighting, small single axis power supplies and switching power supplies, since the operating temperature range is -55C to +150C.

The ZXMP7A17GTA works by allowing voltage through the drain-source region when the gate voltage is given. The voltage applied to the gate determines the conductivity of the device. When it is more positive than the threshold voltage, Vth, the device is in its “on-state”, allowing current to flow from the source to the drain. When the applied gate voltage is below the threshold voltage, Vth, the device is in its “off-state”, thereby blocking all current from flowing through the channel.

The ZXMP7A17GTA also features an intrinsically low on-state resistance and high transconductance. This is due to a semiconductor channel made from metal oxide, which makes this device a preferred method for amplifying small signals or providing substantial current for a circuit. This is why this device is often used for switching applications. The ZXMP7A17GTA also has low input capacitance and can operate at high frequency with low thermal runaway.

The on-state gate-source voltage, Vgs (th) of the ZXMP7A17GTA is ± 18V. This is the gate-source threshold voltage, thus Vgs (th) must be increased significantly before the threshold voltage is reached and the device can be switched on. Once the threshold voltage is reached and the device is switched on, current will flow from the drain to the source. The drain current that is produced is proportional to the drain-source voltage and is determined by the multiplication of the transconductance, gm, and the gate-source voltage.

The ZXMP7A17GTA is a single MOSFET device that is suitable for low voltage applications. It features a drain-source voltage of 17V, an on-state drain current of 10.5A, and an operating temperature range of -55°C to +150°C. It works by allowing the gate voltage to determine the conductivity of the device. When the gate voltage is more positive than the threshold voltage, Vth, current will flow from the source to the drain. The on-state gate-source voltage, Vgs (th), must be increased significantly before the threshold voltage is reached and the device can be switched on. The ZXMP7A17GTA is an ideal device to choose for linear applications or switching applications due to its intrinsic low on-state resistance and high transconductance.

The specific data is subject to PDF, and the above content is for reference